公开(公告)号：EP1974372A2

公开(公告)日：2008-10-01

申请号：EP07716303.8

申请日：2007-01-03

申请人： International Business Machines Corporation

发明人： CHUDZIK, Michael, P. ,  DORIS, Bruce, B. ,  GUHA, Supratik ,  JAMMY, Rajarao ,  NARAYANAN, Vijay ,  PARUCHURI, Vamsi, K. ,  WANG, Yun, Y. ,  KWONG HON WONG, Keith

IPC分类号： H01L21/336

CPC分类号： H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal- oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.