公开(公告)号：EP1135801A1

公开(公告)日：2001-09-26

申请号：EP99956237.4

申请日：1999-11-26

申请人： International Business Machines Corporation ,  IBM United Kingdom Limited

发明人： Agahi, Farid ,  Hsu, Louis ,  Mandelman, Jack

IPC分类号： H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10864 ,  H01L27/10841

摘要： A memory device in a substrate having a trench with side walls in the substrate includes bit line and word line conductors. Signal storage node has first electrode, second electrode formed within the trench, and node dielectric formed between the electrodes. Signal transfer device has: an annular signal transfer region with outer surface adjacent side walls of the trench, an inner surface, a first and a second end; first diffusion region coupling first end of the signal transfer region to second electrode of the signal storage node; second diffusion region coupling second end of signal transfer region to bit line conductor; a gate insulator coating the inner surface of signal transfer region; and a gate conductor coating the gate insulator and coupled to the word line. Conductive connecting member couples signal transfer region to reference voltage to reduce floating body effects.