Semiconductor laser diode with advanced window structure
    1.
    发明公开
    Semiconductor laser diode with advanced window structure 有权
    Halbleiterlaserdiode mit Weiterentwickelter Fensterstruktur

    公开(公告)号:EP1903646A2

    公开(公告)日:2008-03-26

    申请号:EP07253681.6

    申请日:2007-09-18

    IPC分类号: H01S5/028

    摘要: The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section (53), a current blocking section (54) and a partially current blocking section (55).

    摘要翻译: 本发明涉及具有增加的灾难性光学损伤(COD)功率限制的半导体激光二极管结构,其特征在于在二极管的输出端具有三个部分,有时称为窗口。 这些包括光学透明部分(53),电流阻挡部分(54)和局部电流阻挡部分(55)。