公开(公告)号：EP1950610B1

公开(公告)日：2012-05-02

申请号：EP06822224.9

申请日：2006-10-25

申请人： JSR Corporation

发明人： NAKAMURA, Atsushi, c/o JSR Corporation ,  NAKAGAWA, Hiroki, c/o JSR Corporation ,  NAKASHIMA, Hiromitsu, c/o JSR Corporation ,  TSUJI, Takayuki, c/o JSR Corporation ,  DOUGAUCHI, Hiroshi, c/o JSR Corporation ,  KOUNO, Daita, c/o JSR Corporation ,  NISHIMURA, Yukio, c/o JSR Corporation

IPC分类号： G03F7/20 ,  G03F7/11

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： Disclosed is a composition for forming upper films which enables to form a coating film on a photoresist without causing intermixing with the photoresist film, which coating film is stable and does not dissolve into a medium such as water during immersion exposure, while being easily dissolved in an alkaline developing solution. Also disclosed is a method for forming a photoresist pattern. Specifically disclosed is a composition for forming an upper film, which covers a photoresist film for forming a pattern through irradiation of radiation. This composition is obtained by dissolving a resin, which is soluble in a developing solution for developing the photoresist film, in a solvent. The solvent has a viscosity at 20˚C of less than 5.2 × 10-3 Pa·s, and does not cause intermixing between the photoresist film and the composition for forming an upper film. In addition, the solvent contains an ether or a hydrocarbon.

公开(公告)号：EP1950610A1

公开(公告)日：2008-07-30

申请号：EP06822224.9

申请日：2006-10-25

申请人： JSR Corporation

发明人： NAKAMURA, Atsushi, c/o JSR Corporation ,  NAKAGAWA, Hiroki, c/o JSR Corporation ,  NAKASHIMA, Hiromitsu, c/o JSR Corporation ,  TSUJI, Takayuki, c/o JSR Corporation ,  DOUGAUCHI, Hiroshi, c/o JSR Corporation ,  KOUNO, Daita, c/o JSR Corporation ,  NISHIMURA, Yukio, c/o JSR Corporation

IPC分类号： G03F7/11 ,  C08F216/02 ,  C08F220/02 ,  C08F226/02 ,  C08F228/02 ,  G03F7/38 ,  H01L21/027

CPC分类号： G03F7/11 ,  C08F220/18 ,  C08F220/30 ,  G03F7/0046 ,  G03F7/2041

摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2 x 10 -3 Pa·s at 20°C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.

摘要翻译： 设置形成在光致抗蚀剂，同时使与该光致抗蚀剂膜和光致抗蚀剂图案化的方法几乎没有相互混合的上部层形成用组合物。 上部层形成用组合物被稳定地保持而不会在介质中被洗脱：如液浸曝光时的水和在碱性显影剂容易溶解。 上部层形成用组合物覆盖以形成通过暴露于辐射的图案的光致抗蚀剂膜。 所述组合物包含在用于光致抗蚀剂膜，并且其中所述树脂溶解的溶剂的显影剂的树脂可溶解。 所述溶剂具有在20℃下小于5.2×10 -3帕·s的粘度 此外，该溶剂不会使光致抗蚀剂膜和上部层形成用组合物的混合。 所述溶剂包含醚或烃。