Aqueous dispersion for chemical mechanical polishing of metal films
    2.
    发明公开
    Aqueous dispersion for chemical mechanical polishing of metal films 审中-公开
    WässrigeDispersion zum chemisch-mechanischen Polieren von Metallfilmen

    公开(公告)号:EP1138734A2

    公开(公告)日:2001-10-04

    申请号:EP01108139.5

    申请日:2001-03-30

    申请人: JSR Corporation

    摘要: It is an object of the present invention to provides an aqueous CMP dispersion with an adequately high initial removal rate, and which, even after repeated polishing, exhibits at least one, and preferably two or more, of the following functions and effects: (1) reduction of performance of polishing pads is suppressed and an adequate removal rate is maintained, (2) generation of pits on polishing surfaces is inhibited, and (3) uneven sections on polishing surfaces are flattened, and satisfactory finished surfaces can be formed with high precision. The aqueous CMP dispersion comprises an abrasive, an organic compound and water. The organic compound with an effect of suppressing reduction of performance of polishing pads may be biphenol, bipyridyl, vinylpyridine, adenine or the like. The organic compound with an effect of inhibiting generation of pits on polishing surfaces may be biphenol, bipyridyl, vinylpyridine, hypoxanthine or the like. The organic compound with an effect of flattening uneven sections on polishing surfaces may be biphenol, bipyridyl, vinylpyridine, salicylaldoxime or the like. The aqueous CMP dispersion of the present invention that contains specific organic compounds has at least one and especially two functions and effects from among that of suppressing reduction of performance of polishing pads, that of suppressing void wearing of polishing surfaces and that of flattening polishing surfaces, as well as a combination of these three functions and effects, even with repeated polishing. The aqueous CMP dispersion is particularly useful for polishing of copper films, and can form satisfactory finished surfaces with high precision.

    摘要翻译: 水性CMP分散体包含研磨剂,有机化合物和水。 具有抑制抛光垫性能降低的效果的有机化合物可以是联苯酚,联吡啶,乙烯基吡啶,腺嘌呤等。 具有抑制抛光面上产生凹坑效果的有机化合物可以是联苯酚,联吡啶,乙烯基吡啶,次黄嘌呤等。 在抛光表面上具有平坦化不均匀部分的作用的有机化合物可以是联苯酚,联吡啶基,乙烯基吡啶,水杨醛肟等。

    Aqueous dispersion for chemical mechanical polishing
    3.
    发明公开
    Aqueous dispersion for chemical mechanical polishing 有权
    波兰化学学士学位

    公开(公告)号:EP1077240A1

    公开(公告)日:2001-02-21

    申请号:EP00117719.5

    申请日:2000-08-17

    申请人: JSR Corporation

    IPC分类号: C09G1/02 C09K3/14 H01L21/321

    摘要: It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.

    摘要翻译: 本发明的目的是提供一种用于CMP的水分散体,其在抛光表面上不产生划痕,并且在用于抛光铜等时以适当的速率进行抛光。 本发明的水性分散体含有由具有特定官能团的聚合物构成的水和聚合物颗粒,并且还可以含有络合剂,在研磨面上形成钝化膜的化合物和/或氧化剂。 具体的官能团是可以与抛光面的金属反应或可以形成阳离子的官能团,优选选自氨基,吡啶基和丙烯酰胺基。 可以使用具有特定官能团的引发剂和/或单体获得聚合物。 聚合物也可以具有交联结构。