公开(公告)号：EP4119703A1

公开(公告)日：2023-01-18

申请号：EP22188569.2

申请日：2014-03-11

申请人： JX Nippon Mining & Metals Corp.

发明人： NODA, Akira ,  OTA, Masaru ,  Hirano, Ryuichi

IPC分类号： C30B29/42 ,  C30B15/22 ,  C30B27/02 ,  H01L31/0735 ,  C30B29/40 ,  C30B15/20 ,  C30B15/30 ,  H01L31/18 ,  C30B15/04 ,  H01L31/0304

摘要： In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm -2 can be obtained, despite having a low average zinc concentration of 5 x 10 17 cm -3 to 3 x 10 18 cm -3 , at which a crystal hardening effect does not manifest.