公开(公告)号：EP2666877A1

公开(公告)日：2013-11-27

申请号：EP12736158.2

申请日：2012-01-17

申请人： JX Nippon Mining & Metals Corp.

发明人： TAKAHATA Masahiro ,  SATOH Kazuyuki ,  NARITA Satoyasu ,  GOHARA Takeshi

IPC分类号： C22B59/00 ,  C22B9/22 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  C22C28/00

CPC分类号： C25C3/34 ,  C22B9/22 ,  C22B59/00 ,  C22C28/00 ,  C23C14/3414 ,  H01L21/28079 ,  H01L29/517

摘要： The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700°C to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

摘要翻译： 本发明解决了提供能够有效且稳定地提供生产高纯度镧的方法的技术的问题，所述方法的特征在于：除气体成分外的纯度为2N-5N的粗氧化镧起始材料为 用过的; 该材料在450-700℃的浴温下进行熔盐电解以产生镧晶体; 随后将镧晶体脱盐：然后进行电子束熔化以除去挥发性物质。 本发明还解决了提供能够有效且稳定地提供高纯度镧，高纯度镧自身，由高纯度材料镧形成的溅射靶的技术的问题; 以及以高纯度镧为主要成分的金属门用薄膜。

公开(公告)号：EP2666877B1

公开(公告)日：2019-05-15

申请号：EP12736158.2

申请日：2012-01-17

申请人： JX Nippon Mining & Metals Corp.

发明人： TAKAHATA Masahiro ,  SATOH Kazuyuki ,  NARITA Satoyasu ,  GOHARA Takeshi

IPC分类号： C22B59/00 ,  C22B9/22 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  C22C28/00