公开(公告)号：EP0162711A3

公开(公告)日：1986-05-28

申请号：EP85303599

申请日：1985-05-22

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Horioka, Keiji c/o Patent Division ,  Okano, Haruo c/o Patent Division ,  Sekine, Makoto c/o Patent Division

IPC分类号： H01L21/314 ,  C23C08/36

CPC分类号： H01L21/02238 ,  C04B41/4505 ,  C04B41/81 ,  C23C8/04 ,  C23C16/047 ,  H01L21/02255 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/76224 ,  H01L21/76281

摘要： @ An insulation layer (43) is selectively formed by exposing the surface of a workpiece (41) to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece (41) to form an insulating compound. The surface layer of the workpiece (41) is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece (41) through the atmosphere of the gaseous mixture, thereby dissociating the halogen-based gas. As a result, a layer (43) comprising the insulating compound is formed on the selected region of the surface of the workpiece (41) on which the light rays have been directly irradiated.