公开(公告)号：EP0337482B1

公开(公告)日：1994-11-09

申请号：EP89106712.6

申请日：1989-04-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Koyama, Takeshi c/o Intellectual Property Division

IPC分类号： H01L27/02 ,  H01L29/91

CPC分类号： H01L27/0248 ,  H01L29/417 ,  H01L29/8611

公开(公告)号：EP0337482A3

公开(公告)日：1990-10-31

申请号：EP89106712.6

申请日：1989-04-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Koyama, Takeshi c/o Intellectual Property Division

IPC分类号： H01L27/02 ,  H01L29/91

CPC分类号： H01L27/0248 ,  H01L29/417 ,  H01L29/8611

摘要： A semiconductor device is disclosed which constitu­tes a protection diode including a second region (23) of first conductivity type beneath a marginal portion (28′) of an interconnection pad which is not utilized for bonding. The second region (23), together with an area (24) of second conductivity type, constitutes the pro­tection diode for protection against a possible negative surge voltage.

公开(公告)号：EP0337482A2

公开(公告)日：1989-10-18

申请号：EP89106712.6

申请日：1989-04-14

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Koyama, Takeshi c/o Intellectual Property Division

IPC分类号： H01L27/02 ,  H01L29/91

CPC分类号： H01L27/0248 ,  H01L29/417 ,  H01L29/8611

摘要： A semiconductor device is disclosed which constitu­tes a protection diode including a second region (23) of first conductivity type beneath a marginal portion (28′) of an interconnection pad which is not utilized for bonding. The second region (23), together with an area (24) of second conductivity type, constitutes the pro­tection diode for protection against a possible negative surge voltage.

摘要翻译： 公开了一种半导体器件，其构成保护二极管，其包括第一导电类型的第二区域（23），该第二区域（23）在互连焊盘的边缘部分（28分钟）之下，其不用于接合。 第二区域（23）与第二导电类型的区域（24）一起构成用于防止可能的负浪涌电压的保护二极管。