PHOTORESIST SIMULATION
    1.
    发明公开
    PHOTORESIST SIMULATION 审中-公开
    FOTOLACKSIMULATION

    公开(公告)号:EP2499661A4

    公开(公告)日:2014-03-05

    申请号:EP10830578

    申请日:2010-11-09

    CPC classification number: G06F19/702 G03F7/0045

    Abstract: A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.

    Abstract translation: 一种用于测量光致抗蚀剂轮廓的尺寸特性的基于处理器的方法。 确定光致抗蚀剂体积内的酸产生剂和猝灭剂。 确定由光致抗蚀剂体积吸收的许多光子。 确定转化为酸的多种酸产生剂。 确定光致抗蚀剂体积内的许多酸和猝灭剂反应。 计算光致抗蚀剂体积的发展。 该处理器用于产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像。 测量光致抗蚀剂轮廓的尺寸特性。

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