公开(公告)号：EP3295478A1

公开(公告)日：2018-03-21

申请号：EP16793288

申请日：2016-05-07

Applicant: KLA TENCOR CORP

Inventor： PANDEV STILIAN ,  KAPASI SANJAY ,  SMITH MARK D ,  LEVY ADY

IPC: H01L21/66

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

公开(公告)号：EP2499661A4

公开(公告)日：2014-03-05

申请号：EP10830578

申请日：2010-11-09

Applicant: KLA TENCOR CORP

Inventor： BIAFORE JOHN J ,  SMITH MARK D ,  GRAVES JOHN S ,  BLANKENSHIP DAVID

IPC: H01L21/30 ,  G03C5/00 ,  H01L21/027

CPC classification number: G06F19/702 ,  G03F7/0045

Abstract: A processor based method for measuring dimensional properties of a photoresist profile. A number acid generators and quenchers within a photoresist volume is determined. A number of photons absorbed by the photoresist volume is determined. A number of the acid generators converted to acid is determined. A number of acid and quencher reactions within the photoresist volume is determined. A development of the photoresist volume is calculated. The processor is used to produce a three-dimensional simulated scanning electron microscope image of the photoresist profile created by the development of the photoresist volume. The dimensional properties of the photoresist profile are measured.

Abstract translation: 一种用于测量光致抗蚀剂轮廓的尺寸特性的基于处理器的方法。 确定光致抗蚀剂体积内的酸产生剂和猝灭剂。 确定由光致抗蚀剂体积吸收的许多光子。 确定转化为酸的多种酸产生剂。 确定光致抗蚀剂体积内的许多酸和猝灭剂反应。 计算光致抗蚀剂体积的发展。 该处理器用于产生通过光刻胶体积的发展产生的光致抗蚀剂轮廓的三维模拟扫描电子显微镜图像。 测量光致抗蚀剂轮廓的尺寸特性。