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1.发明公开Process for manufacturing thin film of high-Tc superconducting oxide 失效Verfahren zur Herstellung vondünnenSchichten aus Hochtemperatur-Supraleiteroxyd。
公开(公告)号：EP0329103A2
公开(公告)日：1989-08-23
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.
摘要翻译： 一种通过化学气相沉积技术制造高Tc超导氧化物薄膜的方法，该技术使用构成超导氧化物的元素的蒸发源和一种载气与氧气，该方法包括在衬底上沉积一层氧化物组合物 在温度低于1000℃的化学沉积条件下，并且对于至少包括钡，钇和铜的元素的蒸发源减压，并使沉积层进行外延晶体生长以形成具有化学组成的氧化物薄膜 的Ba2YCu3O7-y，其中所述蒸发源由有机络合物如β-二酮络合物组成。
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2.发明授权Process for manufacturing thin film of high-Tc superconducting oxide 失效一种用于生产高温Supraleiteroxyd的薄层的过程。
公开(公告)号：EP0329103B1
公开(公告)日：1995-06-07
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-Tc superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000 DEG C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba2YCu3O7-y, wherein said vaporizing sources consist each of an organic complex compound, such as beta -diketone complex.
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3.发明授权Process for manufacturing thin film of high-Tc superconducting oxide 失效一种用于生产高温的薄层的过程Supraleiteroxyd
公开(公告)号：EP0329103B2
公开(公告)日：1999-03-17
申请号：EP89102584.3
申请日：1989-02-15
申请人： Kabushiki Kaisha Riken , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-Tc superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000 DEG C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba2YCu3O7-y, wherein said vaporizing sources consist each of an organic complex compound, such as beta -diketone complex.
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公开(公告)号：EP0329103A3
公开(公告)日：1990-10-10
申请号：EP89102584.3
申请日：1989-02-15
申请人： KABUSHIKI KAISHA RIKEN , Research Development Corporation of Japan , Hirai, Toshio , Yamane, Hisanori
CPC分类号： H01L39/2441 , C23C16/408 , C30B25/02 , C30B29/22 , C30B29/225
摘要： A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.
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