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    RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION
    2.
    发明授权
    RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION 失效
    RHOMBOHEDRAL多结晶硼氮化硼及其生产工艺

    公开(公告)号：EP0216932B1

    公开(公告)日：1992-05-13

    申请号：EP86901511.5

    申请日：1986-02-27

    申请人： Research Development Corporation of Japan ,  JAPAN METALS & CHEMICALS CO., LTD. ,  THE FURUKAWA ELECTRIC CO., LTD. ,  Hirai, Toshio

    发明人： Matsuda, Toshitsugu ,  Nakae, Hiroyuki ,  Hirai, Toshio

    IPC分类号： C01B21/064 ,  C23C16/34

    CPC分类号： C23C16/342 ,  C01B21/064 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/583 ,  C04B35/5831 ,  C30B35/002 ,  Y10S148/113

    摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

    摘要翻译： 高纯度，高密度的菱形多晶氮化硼，其基本上包含菱形晶体并且具有朝向一个方向的三重对称轴（与六角形表示的轴c平行的轴），其可以以任意质量或薄 通过化学气相沉积工艺将硼源气体和氮源气体以及任选的稀释气体和载气引入具有加热基底的反应器中，以在基底上沉积氮化硼，同时提供氮源气体 - 和/或围绕加热基座的载气扩散层。 所得到的氮化硼作为半导体，熔化用坩埚，各种高温夹具，高频绝缘体，微波通过孔，半导体用硼源等非常有用，而且作为高压相 立方氮化硼。

    Process for manufacturing thin film of high-Tc superconducting oxide
    3.
    发明公开
    Process for manufacturing thin film of high-Tc superconducting oxide 失效
    Verfahren zur Herstellung vondünnenSchichten aus Hochtemperatur-Supraleiteroxyd。

    公开(公告)号：EP0329103A2

    公开(公告)日：1989-08-23

    申请号：EP89102584.3

    申请日：1989-02-15

    申请人： KABUSHIKI KAISHA RIKEN ,  Research Development Corporation of Japan ,  Hirai, Toshio ,  Yamane, Hisanori

    发明人： Kurosawa, Hideyuki c/o KABUSHIKI KAISHA RIKEN ,  Hirai, Toshio ,  Yamane, Hisanori

    IPC分类号： H01L39/24 ,  C04B35/50 ,  C23C16/40

    CPC分类号： H01L39/2441 ,  C23C16/408 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225

    摘要： A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.

    摘要翻译： 一种通过化学气相沉积技术制造高Tc超导氧化物薄膜的方法，该技术使用构成超导氧化物的元素的蒸发源和一种载气与氧气，该方法包括在衬底上沉积一层氧化物组合物 在温度低于1000℃的化学沉积条件下，并且对于至少包括钡，钇和铜的元素的蒸发源减压，并使沉积层进行外延晶体生长以形成具有化学组成的氧化物薄膜 的Ba2YCu3O7-y，其中所述蒸发源由有机络合物如β-二酮络合物组成。