公开(公告)号：EP3813243A1

公开(公告)日：2021-04-28

申请号：EP20194907.0

申请日：2020-09-07

申请人： Kabushiki Kaisha Toshiba

发明人： HAYASHI, Yusuke ,  TAKAO, Kazuto ,  IKEDA, Kentaro

IPC分类号： H02M7/219 ,  H02M3/337 ,  H02M1/00 ,  H02M7/08 ,  H02M3/28

摘要： A power switcher includes a first normally-off transistor including a first electrode, second electrode and the first control electrode, the first normally-off transistor switching between interrupting and not interrupting a current path between first and second electrodes according to a drive voltage input to the first control electrode, a second normally-on transistor cascode-connected to the first transistor and including a second control electrode to which the second electrode of the first transistor is connected, a control voltage generator that generates a control voltage in accordance with a voltage between the first and second electrodes of the first transistor, and a drive voltage generator that generates the drive voltage equal to or lower than a withstand voltage of the first transistor in accordance with the control voltage.

公开(公告)号：EP3742594A1

公开(公告)日：2020-11-25

申请号：EP20161882.4

申请日：2020-03-09

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Energy Systems & Solutions Corporation

发明人： IKEDA, Kentaro

IPC分类号： H02M1/32 ,  H03K17/082

摘要： A peak hold circuit has a first capacitor (C1) and a second capacitor (C2) that are serially connected between a voltage input node and a reference voltage node, a first rectifying element (D1) that has an anode connected to the reference voltage node and a cathode connected to a connection node of the first capacitor (C1) and the second capacitor (C2), a second rectifying element (D2) that has an anode connected to the connection node of the first capacitor (C1) and the second capacitor (C2), and a cathode, and a third capacitor (C3) that is connected between the cathode of the second rectifying element (D2) and the reference voltage node, wherein a peak value of a surge voltage input to the voltage input node is output from the cathode of the second rectifying element (D2).

公开(公告)号：EP3324544B1

公开(公告)日：2020-08-19

申请号：EP16824534.8

申请日：2016-07-14

申请人： Kabushiki Kaisha Toshiba

发明人： IKEDA, Kentaro ,  YASUZUMI, Takenori ,  HASEGAWA, Kohei

IPC分类号： H03K17/10 ,  H03K17/74 ,  H03K17/0814 ,  H03K17/0812

公开(公告)号：EP3324544A1

公开(公告)日：2018-05-23

申请号：EP16824534.8

申请日：2016-07-14

申请人： Kabushiki Kaisha Toshiba

发明人： IKEDA, Kentaro ,  YASUZUMI, Takenori ,  HASEGAWA, Kohei

IPC分类号： H03K17/08 ,  H03K17/10

摘要： A semiconductor device according to an embodiment includes: a normally-off transistor having a first source, a first drain, and a first gate; a normally-on transistor having a second source electrically connected to the first drain, a second drain, and a second gate; a capacitor having a first end and a second end, the second end being electrically connected to the second gate; a first diode having a first anode electrically connected between the second end and the second gate and having a first cathode electrically connected to the second source; a first resistor provided between the first end and the first gate; and a second diode having a second anode electrically connected to the first end and having a second cathode electrically connected to the first gate, the second diode being provided in parallel with the first resistor.

公开(公告)号：EP2998994B1

公开(公告)日：2018-06-13

申请号：EP15175075.9

申请日：2015-07-02

申请人： Kabushiki Kaisha Toshiba

发明人： KAJIWARA, Yosuke ,  IKEDA, Kentaro ,  SAITO, Hisashi ,  KURAGUCHI, Masahiko

IPC分类号： H01L23/528 ,  H01L27/06 ,  H01L23/48 ,  H01L23/485 ,  H01L23/522 ,  H01L29/417 ,  H01L29/778 ,  H01L29/78 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/41758 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/535 ,  H01L27/0605 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment includes a nitride semiconductor layer, a plurality of source electrodes provided on the nitride semiconductor layer, a plurality of drain electrodes, a plurality of gate electrodes, a first interconnection having a first distance from the nitride semiconductor layer and electrically connecting the source electrodes, a second interconnection electrically connecting the gate electrodes, and a third interconnection having a third distance from the nitride semiconductor layer and electrically connecting the drain electrodes. Each of the drain electrodes are provided between the source electrodes. Each of the gate electrodes are provided between each of the source electrodes and each of the drain electrodes. The third distance is larger than the first distance.

公开(公告)号：EP2998994A1

公开(公告)日：2016-03-23

申请号：EP15175075.9

申请日：2015-07-02

申请人： Kabushiki Kaisha Toshiba

发明人： KAJIWARA, Yosuke ,  IKEDA, Kentaro ,  SAITO, Hisashi ,  KURAGUCHI, Masahiko

IPC分类号： H01L23/528 ,  H01L27/06

CPC分类号： H01L29/41758 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5283 ,  H01L23/535 ,  H01L27/0605 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment includes a nitride semiconductor layer, a plurality of source electrodes provided on the nitride semiconductor layer, a plurality of drain electrodes, a plurality of gate electrodes, a first interconnection having a first distance from the nitride semiconductor layer and electrically connecting the source electrodes, a second interconnection electrically connecting the gate electrodes, and a third interconnection having a third distance from the nitride semiconductor layer and electrically connecting the drain electrodes. Each of the drain electrodes are provided between the source electrodes. Each of the gate electrodes are provided between each of the source electrodes and each of the drain electrodes. The third distance is larger than the first distance.

摘要翻译： 根据一个实施例的半导体器件包括氮化物半导体层，设置在氮化物半导体层上的多个源电极，多个漏电极，多个栅电极，与氮化物半导体层具有第一距离的第一互连和 电连接所述源电极，电连接所述栅电极的第二互连以及与所述氮化物半导体层具有第三距离并电连接所述漏电极的第三互连。 每个漏电极设置在源电极之间。 每个栅电极设置在每个源电极和每个漏电极之间。 第三距离大于第一距离。

公开(公告)号：EP2995965A1

公开(公告)日：2016-03-16

申请号：EP15174843.1

申请日：2015-07-01

申请人： Kabushiki Kaisha Toshiba

发明人： IKEDA, Kentaro

IPC分类号： G01R31/26

CPC分类号： G01R31/2621 ,  H01L29/2003 ,  H01L29/7787

摘要： The semiconductor inspection apparatus according to an embodiment includes a first detecting unit capable of being electrically connected to a source electrode of a field effect transistor to be evaluated, the first detecting unit used for detecting voltage, a first diode including a first anode electrode and a first cathode electrode, the first cathode electrode capable of being electrically connected to a drain electrode of the field effect transistor, a second detecting unit electrically connected to the first anode electrode, the second detecting unit used for detecting voltage, a first resistance element of which a first end is electrically connected to the first anode electrode, and a first electric power source electrically connected to a second end of the first resistance element.

摘要翻译： 根据实施例的半导体检查装置包括：第一检测单元，其能够电连接到待评估的场效应晶体管的源电极，用于检测电压的第一检测单元，包括第一阳极电极和 第一阴极，能够电连接到场效应晶体管的漏电极的第一阴极电极，与第一阳极电连接的第二检测单元，用于检测电压的第二检测单元，其中第一阴极电极的第一电阻元件 第一端电连接到第一阳极电极，第一电源电连接到第一电阻元件的第二端。