公开(公告)号：EP4435868A1

公开(公告)日：2024-09-25

申请号：EP23191687.5

申请日：2023-08-16

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： KIYOSAWA, Tsutomu

IPC分类号： H01L29/12 ,  H01L29/78 ,  H01L29/06 ,  H01L21/336

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/0657

摘要： A semiconductor device according to embodiments includes a device region and a dicing region surrounding the device region. The device region includes a first electrode, a second electrode, and a silicon carbide layer having a first face on the side of the first electrode and a second face on the side of the second electrode. At least a portion of the silicon carbide layer is provided between the first electrode and the second electrode. The dicing region includes the silicon carbide layer having the first face and the second face. A first maximum distance from the second face to the first face of the device region in a normal direction of the second face is greater than a second maximum distance from the second face to the first face of the dicing region in the normal direction.

公开(公告)号：EP4439672A1

公开(公告)日：2024-10-02

申请号：EP23191581.0

申请日：2023-08-16

申请人： KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

发明人： KIYOSAWA, Tsutomu

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/1608 ,  H01L29/0623 ,  H01L29/0878

摘要： A semiconductor device according to an embodiment includes: a first electrode; a second electrode; a silicon carbide layer including a first silicon carbide region of a first conductive type including a first region, a second region having a higher first-conductive-type impurity concentration than the first region, and a third region between the second region and the first electrode, a second silicon carbide region of a second conductive type, a third silicon carbide region of the first conductive type, and a fourth silicon carbide region of the second conductive type between the first region and the second region; a gate electrode in the silicon carbide layer; and a gate insulating layer. The second region includes a first portion and a second portion. The second portion is between the first portion and the gate insulating layer, and has a lower first-conductive-type impurity concentration than a first-conductive-type impurity concentration of the first portion.