公开(公告)号：EP3796396A1

公开(公告)日：2021-03-24

申请号：EP20155365.8

申请日：2020-02-04

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Kono, Hiroshi ,  Kanie, Souzou ,  Fukatsu, Shigeto ,  Suzuki, Takuma

IPC分类号： H01L29/78 ,  H01L29/872 ,  H01L29/06 ,  H01L29/16

摘要： A semiconductor device of embodiments includes a silicon carbide layer including an element region and a termination region around the element region, the termination region having first straight-line portions extending in a first direction, second straight-line portions extending in a second direction, and corner portions between the first straight-line portions and the second straight-line portions, the termination region including a second-conductivity-type second silicon carbide region having a dot-line shape with first dot portions and first space portions surrounding the element region , an occupation ratio of the first dot portions is larger in the corner portions than in the first straight-line portions, and a second-conductivity-type third silicon carbide region having a dot-line shape with second dot portions and second space portions surrounding the second silicon carbide region, an occupation ratio of the second dot portions is lager in the corner portions than in the first straight-line portions.