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公开(公告)号：EP1463129A2
公开(公告)日：2004-09-29
申请号：EP04007129.2
申请日：2004-03-24
CPC分类号： G02F1/133385 , G02F1/133603 , H01L23/38 , H01L27/14658 , H01L51/529 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A liquid crystal display including a liquid crystal panel and an organic EL device, which functions as a backlight. The organic EL device includes a Peltier element, which functions as a substrate, and an organic EL element formed on the Peltier element. The organic EL element includes an organic EL layer and first and second electrodes, which sandwich the organic EL layer. The first electrode is shared with a metal layer, which is a heat absorbing electrode of the Peltier element. The second electrode is formed from ITO, which transmits visible light. Light emitted from the organic EL element exits from the second electrode. As a result, the organic EL device is thin and has a superior cooling effect.
摘要翻译： 一种液晶显示器，包括用作背光源的液晶面板和有机EL器件。 有机EL器件包括用作衬底的珀尔帖元件和形成在珀尔帖元件上的有机EL元件。 有机EL元件包括有机EL层和夹着有机EL层的第一和第二电极。 第一电极与作为珀耳帖元件的吸热电极的金属层共享。 第二电极由透过可见光的ITO形成。 从有机EL元件发射的光从第二电极排出。 结果，有机EL元件薄且具有优异的冷却效果。
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2.发明公开
公开(公告)号：EP1912253A2
公开(公告)日：2008-04-16
申请号：EP08001543.1
申请日：2001-03-13
申请人： Ohmi, Tadahiro
发明人： Ohmi, Tadahiro , Sugawa, Shigetoshi
IPC分类号： H01L21/316 , H01L21/318 , H01L21/3105
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.
摘要翻译： 形成绝缘膜的方法包括以下步骤：在基板上形成绝缘膜，并且通过将绝缘膜暴露于由等离子体形成的原子态氧O *或原子状态的氮化氢自由基NH *来改变绝缘膜的膜质量 使用Kr或Ar作为惰性气体。
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公开(公告)号：EP1912253A3
公开(公告)日：2009-12-30
申请号：EP08001543.1
申请日：2001-03-13
申请人： Ohmi, Tadahiro
发明人： Ohmi, Tadahiro , Sugawa, Shigetoshi
IPC分类号： H01L21/316 , H01L21/318 , H01L21/3105
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.
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公开(公告)号：EP1602974A1
公开(公告)日：2005-12-07
申请号：EP04705928.2
申请日：2004-01-28
IPC分类号： G03F1/08 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70283 , G03F7/70291
摘要： Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.
摘要翻译： 在由二维阵列微镜106反射的图案的激光也被掩模图案数据输出装置107种形式的放大图案110的该放大的图案以缩小的方式投射的掩模数据的基础上，到掩模衬底控制 109通过一个缩小投影光学系统102，由此形成光刻图案111由于大量的模式由二维阵列微镜106写入到瞬间，光刻所需要的时间将整个掩模图案被大大地缩短为 与以往相比。 其结果，掩模成本能够大大降低。
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公开(公告)号：EP1427003A3
公开(公告)日：2005-03-02
申请号：EP03027739.6
申请日：2003-12-02
申请人： OHMI, Tadahiro
IPC分类号： H01L21/306 , H01L21/336
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H 2 O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
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公开(公告)号：EP1427003A2
公开(公告)日：2004-06-09
申请号：EP03027739.6
申请日：2003-12-02
申请人： OHMI, Tadahiro
IPC分类号： H01L21/306 , H01L21/336
CPC分类号： H01L21/3185 , H01L21/30604 , H01L21/31654 , H01L21/318 , H01L29/6659
摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15nm, preferably, 0.09nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H 2 O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.
摘要翻译： 在形成于具有实质上（110）晶面取向的硅表面上的半导体器件中，硅表面被平坦化，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这能够制造 高迁移率的n-MOS晶体管。 通过重复在氧自由基气氛中的自牺牲氧化物膜的沉积过程和自牺牲氧化物膜的去除过程，通过在脱气的H 2 O或低OH密度气氛中清洁硅表面来获得这种平坦的硅表面 或者通过氢或重氢强烈地终止硅表面。 自牺牲氧化物膜的沉积过程可以通过各向同性氧化进行。
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