公开(公告)号：EP0968537A2

公开(公告)日：2000-01-05

申请号：EP98932464.5

申请日：1998-07-27

申请人： Koninklijke Philips Electronics N.V.

发明人： MUTSAERS, Cornelis, Marcus, Johannes ,  DE LEEUW, Dagobert, Michel ,  DRURY, Christopher, John

IPC分类号： H01L51/00

CPC分类号： H01L51/0516 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0541

摘要： A practical method of manufacturing an organic field-effect transistor is disclosed. By applying the insulating layer having a thickness of 0.3 νm or less to a substantially planar electrode layer, an organic field-effect transistor can be made having a channel length down to 2 νm, satisfying the condition for voltage amplification at voltages well below 10 V, and having an on/off ratio of about 25.

公开(公告)号：EP0966758A2

公开(公告)日：1999-12-29

申请号：EP98932465.0

申请日：1998-07-27

申请人： Koninklijke Philips Electronics N.V.

发明人： DRURY, Christopher, John ,  MUTSAERS, Cornelis, Marcus, Johannes ,  HART, Cornelis, Maria ,  DE LEEUW, Dagobert, Michel

IPC分类号： H01L21 ,  H01L23 ,  H01L51

CPC分类号： H01L21/486 ,  H01L21/76877 ,  H01L23/49827 ,  H01L23/49883 ,  H01L23/5328 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T29/4916 ,  H01L2924/00

摘要： A simple and reliable method of providing a vertical interconnect between thin-film microelectronic devices is provided. In said method, a tool tip (20) is used to make a notch (104) in a vertical interconnect area (100) of two organic electrically conducting areas (3, 6) separated from each other by an organic electrically insulating area (5). The method is used in the manufacture of integrated circuits consisting substantially of organic materials.