公开(公告)号：EP1774065A1

公开(公告)日：2007-04-18

申请号：EP05758835.2

申请日：2005-07-04

申请人： Koninklijke Philips Electronics N.V.

发明人： YU, Chengfu, Philips Electronics Industries Ltd. ,  CHEN, Chia-Chun, Philips Electronics Ind. Ltd. ,  OBERNDORFF, Pascal ,  HSIEH, Ker-Chang, Philips Electronics Ind. Ltd.

IPC分类号： C25D3/32

CPC分类号： C25D3/32 ,  H01L2924/0002 ,  H05K3/244 ,  Y10T428/12014 ,  Y10T428/12708 ,  Y10T428/12715 ,  H01L2924/00

摘要： The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.