公开(公告)号：EP1208594A2

公开(公告)日：2002-05-29

申请号：EP00992860.7

申请日：2000-12-06

申请人： Koninklijke Philips Electronics N.V. ,  Philips Semiconductors Inc.

发明人： OLSEN, Christopher, S.

IPC分类号： H01L21/762

CPC分类号： H01L21/76235

摘要： An isolation structure on an integrated circuit is formed using a shallow trench (51) isolation process. On a substrate (10), a trench (51) is formed. A thermal anneal is performed to oxidize exposed areas of the substrate (10) to provide for round corners (42) at a perimeter of the trench (51). The thermal anneal is perfomed in an ambient where a chlorine source is added to O2 in order to minimize facets while creating the round corners (42). Oxidation time is lengthened by introducing an inert gas during the thermal anneal.