公开(公告)号：EP2239759A3

公开(公告)日：2011-12-28

申请号：EP09014045.0

申请日：2009-11-10

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Chang, Hong-Young ,  Lee, Hun-Su

IPC: H01J37/32

CPC classification number: H01J37/32541

Abstract: Provided are a substrate treatment method, a substrate treatment apparatus, a preliminary electrode structure, and a process electrode structure. The substrate treatment method includes selecting a shape of a hole by confirming at least one of plasma characteristics and a process result based on the shape of a hole with the use of a preliminary electrode structure where holes are formed to have shapes varying with positions; selecting an optimal process position by treating a substrate with the use of a measuring electrode structure where density of the hole varies with positions; providing a process electrode structure by transferring a hole of the measuring electrode structure corresponding to the optimal process position; and compensating process nonuniformity based on positions with the use of the process electrode structure.

公开(公告)号：EP2239759A2

公开(公告)日：2010-10-13

申请号：EP09014045.0

申请日：2009-11-10

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Chang, Hong-Young ,  Lee, Hun-Su

IPC: H01J37/32

CPC classification number: H01J37/32541

Abstract: Provided are a substrate treatment method, a substrate treatment apparatus, a preliminary electrode structure, and a process electrode structure. The substrate treatment method includes selecting a shape of a hole by confirming at least one of plasma characteristics and a process result based on the shape of a hole with the use of a preliminary electrode structure where holes are formed to have shapes varying with positions; selecting an optimal process position by treating a substrate with the use of a measuring electrode structure where density of the hole varies with positions; providing a process electrode structure by transferring a hole of the measuring electrode structure corresponding to the optimal process position; and compensating process nonuniformity based on positions with the use of the process electrode structure.

Abstract translation: 提供了基板处理方法，基板处理装置，预备电极结构和处理电极结构。 基板处理方法包括通过使用形成孔的具有随位置变化的形状的预备电极结构，通过基于孔的形状来确认等离子体特性和处理结果中的至少一个来选择孔的形状; 通过使用孔的密度随位置变化的测量电极结构处理衬底来选择最佳工艺位置; 通过传送与最佳处理位置对应的测量电极结构的孔来提供处理电极结构; 并且基于使用过程电极结构的位置来补偿工艺不均匀性。

公开(公告)号：EP1079671A3

公开(公告)日：2001-11-07

申请号：EP00401460.1

申请日：2000-05-25

Applicant: Jusung Engineering Co. Ltd. ,  Korea Advanced Institute of Science and Technology

Inventor： Lee, Yong-Kwan ,  Yoon, Nam-Sik ,  Kim, Sung-Sik ,  Lee, Pyung-Woo ,  Chang, Hong-Young

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H01J37/321 ,  H05H1/46

Abstract: The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.

Abstract translation: 本发明涉及一种低阻抗天线装置，用于产生大量电感耦合等离子体，以调整等离子体密度的均匀分布来处理大尺寸的试样，该天线装置包括：高频电源; 第一天线，用于接收从高频电源提供的高频功率; 以及与第一天线并联连接的第二天线，用于接收从高频电源提供的高频电力，其中在第一和第二天线之间保持谐振状态。

公开(公告)号：EP1079671A2

公开(公告)日：2001-02-28

申请号：EP00401460.1

申请日：2000-05-25

Applicant: Jusung Engineering Co. Ltd. ,  Korea Advanced Institute of Science and Technology

Inventor： Lee, Yong-Kwan ,  Yoon, Nam-Sik ,  Kim, Sung-Sik ,  Lee, Pyung-Woo ,  Chang, Hong-Young

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H01J37/321 ,  H05H1/46

Abstract: The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.

Abstract translation: 本发明涉及一种低阻抗的天线装置，用于产生大量电感耦合等离子体，以处理大尺寸的样品，调整等离子体的密度均匀分布，包括：高频电源; 用于接收从高频电源提供的高频电力的第一天线; 以及与第一天线并联连接的第二天线，用于接收从高频电源提供的高频电力，其中谐振状态保持在第一和第二天线之间。