公开(公告)号：EP4300816A1

公开(公告)日：2024-01-03

申请号：EP22759834.9

申请日：2022-02-25

申请人： Kyocera Corporation

发明人： INO, Yuji ,  SHIRASAWA, Katsuhiko ,  TAKATO, Hidetaka ,  HEITO, Shunsuke ,  NIIRA, Koichiro ,  ITO, Norikazu

IPC分类号： H02S50/10

摘要： Provided is a method of measuring light and elevated temperature induced degradation, the method including a first light soaking step of injecting carriers into p-type crystalline silicon and maintaining the p-type crystalline silicon at 50°C or higher and 150°C or lower until the p-type crystalline silicon has reached a regenerated state, a first measurement step of measuring a first degradation amount of the p-type crystalline silicon in the first light soaking step, a dark annealing step of performing a heat treatment on the p-type crystalline silicon at higher than 150°C and 250°C or lower, a second light soaking step of injecting carriers into the p-type crystalline silicon and maintaining the p-type crystalline silicon at 50°C or higher and 150°C or lower until the p-type crystalline silicon has reached a regenerated state, a second measurement step of measuring a second degradation amount of the p-type crystalline silicon in the second light soaking step, and a calculation step of calculating a light and elevated temperature induced degradation amount of the p-type crystalline silicon based on the first degradation amount and the second degradation amount.