公开(公告)号：EP3125300B1

公开(公告)日：2018-12-12

申请号：EP15768486.1

申请日：2015-02-23

申请人： KYOCERA Corporation

发明人： ARIMA, Takahiro ,  ITO, Norikazu ,  HONMA, Takemichi

IPC分类号： H01L31/0224 ,  H01L31/05

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell (16) is provided with: a semiconductor substrate (2) having a main surface; a plurality of first electrodes (7) disposed so as to be aligned in one direction on the main surface of the semiconductor substrate (2), the first electrodes (7) having obverse and side surfaces; a passivation layer (6) disposed on the main surface of the semiconductor substrate (2) and positioned in the gaps between the first electrodes; a conductive adhesive disposed on the obverse surfaces of the first electrodes (7); and lead members (15) connected to adjacent first electrodes (7) by the conductive adhesive so as to straddle the passivation layer (6). The solar cell (16) is further provided with contact members (12), the contact members (12) being positioned in gaps (11), being disposed on the obverse surface of the passivation layer (6) or the main surface of the semiconductor substrate (2) in alignment with the passivation layer (6) in one direction, and being in contact with parts of the lead members (15) from underneath.

公开(公告)号：EP4300816A1

公开(公告)日：2024-01-03

申请号：EP22759834.9

申请日：2022-02-25

申请人： Kyocera Corporation

发明人： INO, Yuji ,  SHIRASAWA, Katsuhiko ,  TAKATO, Hidetaka ,  HEITO, Shunsuke ,  NIIRA, Koichiro ,  ITO, Norikazu

IPC分类号： H02S50/10

摘要： Provided is a method of measuring light and elevated temperature induced degradation, the method including a first light soaking step of injecting carriers into p-type crystalline silicon and maintaining the p-type crystalline silicon at 50°C or higher and 150°C or lower until the p-type crystalline silicon has reached a regenerated state, a first measurement step of measuring a first degradation amount of the p-type crystalline silicon in the first light soaking step, a dark annealing step of performing a heat treatment on the p-type crystalline silicon at higher than 150°C and 250°C or lower, a second light soaking step of injecting carriers into the p-type crystalline silicon and maintaining the p-type crystalline silicon at 50°C or higher and 150°C or lower until the p-type crystalline silicon has reached a regenerated state, a second measurement step of measuring a second degradation amount of the p-type crystalline silicon in the second light soaking step, and a calculation step of calculating a light and elevated temperature induced degradation amount of the p-type crystalline silicon based on the first degradation amount and the second degradation amount.

公开(公告)号：EP2471973A1

公开(公告)日：2012-07-04

申请号：EP10812041.1

申请日：2010-08-30

申请人： Kyocera Corporation

发明人： ITO, Norikazu ,  INABA, Shinichiro ,  MATSUI, Hiroshi

IPC分类号： C23C16/507 ,  H01L31/04

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/505 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： An apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; and a second electrode located in the chamber with a predetermined spacing from the first electrode, the second electrode including a first supply part supplying a first material gas to a space between the first electrode and the second electrode, a plurality of second supply parts supplying a second material gas to the space, a first supply path connected to the first supply part, through which the first material gas is introduced, and a second supply path connected to the second supply parts, through which the second material gas is introduced, wherein: the second supply path includes a main part with a first inlet through which the second material gas is introduced, and a branch part including a plurality of gas flow paths with a second inlet through which the second material gas is introduced from the main part; a plurality of the second supply parts are connected to each of the plurality of gas flow paths of the branch part; and the main part and the branch part are structured so that the second material gas does not flow into the second supply parts from the first inlet as a straight flow.

摘要翻译： 用于在本发明的方面的用于形成沉积电影gemäß到的装置，包括：腔室; 位于所述腔室中的第一电极; 和位于所述腔室与从所述第一电极，所述第二电极包括第一供给部供给的第一原料气体，以在第一电极和第二电极，第二供给部供给由多个之间的空间内的规定间隔的第二电极 第二原料气体的空间，连接到所述第一供给部，通过该第一原料气体被引入的第一供应路径，以及连接到第二供给部，通过该第二原料气体被引入，worin第二供应路径： 第二供应通道包括具有第一入口，通过该第二原料气体被引入，以及分支部分，其包括与通过所述第二原料气体从所述主要部分中引入的第二入口气体流路的多个主要部分; 第二供给部的一个多元化彼此连接的分支部的气体流路，所述多个; 和该主要部分和分支部分被构造成没有所述第二原料气体不会从第一入口流入第二供给部，为直进流。

公开(公告)号：EP2309023A1

公开(公告)日：2011-04-13

申请号：EP09802988.7

申请日：2009-07-29

申请人： Kyocera Corporation

发明人： NIIRA, Koichiro ,  ITO, Norikazu ,  INABA, Sinichiro ,  MATSUI, Hiroshi

IPC分类号： C23C16/50 ,  C23C16/455 ,  H01L21/205 ,  H01L31/04

CPC分类号： H01L31/075 ,  C23C16/24 ,  C23C16/45574 ,  C23C16/509 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In order to form a high-quality Si-based film at high speed, for example, a deposited film forming device according to one aspect of the present invention includes: a chamber; a first electrode arranged in the chamber; and a second electrode arranged in the chamber and spaced a certain distance from the first electrode. The second electrode includes first and second supplying parts. The first supplying part supplies a first material gas and generates hollow cathode discharge. The second supplying part supplies a second material gas higher in decomposition rate than the first material gas.

摘要翻译： 为了形成高速Si系高品质的电影，对于实施例中，成膜装置沉积gemäß在本发明的一个方面包括：腔室; 在腔室中布置的第一电极; 和第二电极在腔室布置并且与所述第一电极间隔开一定的距离。 所述第二电极包括第一和第二供给部。 第一部分供应供应的第一原料气体和基因率空心阴极放电。 所述第二部分比所述第一原料气体分解速率供给用品第二原料气体更高。

公开(公告)号：EP2242111A1

公开(公告)日：2010-10-20

申请号：EP09708095.6

申请日：2009-02-06

申请人： Kyocera Corporation

发明人： NIIRA, Koichiro ,  NISHIMURA, Takehiro ,  ITO, Norikazu ,  INABA, Shinichiro

IPC分类号： H01L31/04

CPC分类号： H01L31/03921 ,  C23C16/4488 ,  C23C16/50 ,  H01L21/2257 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/077 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a superstrate type a-Si:H thin film solar cell of which the device characteristics are improved as compared with conventional ones. The solar cell device is manufactured by a process comprising depositing phosphorus on a transparent conductive film formed on a transparent substrate and sequentially forming a p-type layer, an i-type layer, and an n-type layer which are formed of a-Si:H on the transparent conductive film by a plasma CVD method. The phosphorus is deposited, for example, by plasmatization of phosphorus-containing gas. Alternatively, the phosphorus is deposited by etching a phosphorus source provided in a margin region where a plasma excitation voltage is applied but no transparent substrate is placed, with hydrogen plasma at the start of the formation of the p-type layer by the plasma CVD method. Preferably, the deposition of phosphorus is controlled so that the arithmetic average value (ΔCav) of the concentration difference between boron and phosphorus within a range of diffusion of boron in the i-type layer may be 1.1 × 10 17 ⁢ c ⁢ m - 3 ≤ Δ ⁢ C ⁢ a ⁢ v ≤ 1.6 × 10 17 ⁢ c ⁢ m - 3 o ⁢ r l ⁢ e ⁢ s ⁢ s .

公开(公告)号：EP3125300A1

公开(公告)日：2017-02-01

申请号：EP15768486.1

申请日：2015-02-23

申请人： KYOCERA Corporation

发明人： ARIMA, Takahiro ,  ITO, Norikazu ,  HONMA, Takemichi

IPC分类号： H01L31/0224 ,  H01L31/05 ,  H01L31/068

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/048 ,  H01L31/0504 ,  Y02E10/50

摘要： A solar cell (16) is provided with: a semiconductor substrate (2) having a main surface; a plurality of first electrodes (7) disposed so as to be aligned in one direction on the main surface of the semiconductor substrate (2), the first electrodes (7) having obverse and side surfaces; a passivation layer (6) disposed on the main surface of the semiconductor substrate (2) and positioned in the gaps between the first electrodes; a conductive adhesive disposed on the obverse surfaces of the first electrodes (7); and lead members (15) connected to adjacent first electrodes (7) by the conductive adhesive so as to straddle the passivation layer (6). The solar cell (16) is further provided with contact members (12), the contact members (12) being positioned in gaps (11), being disposed on the obverse surface of the passivation layer (6) or the main surface of the semiconductor substrate (2) in alignment with the passivation layer (6) in one direction, and being in contact with parts of the lead members (15) from underneath.

摘要翻译： 太阳能电池（16）设置有：具有主表面的半导体衬底（2） 多个第一电极（7），其设置成在半导体基板（2）的主表面上沿一个方向排列，所述第一电极（7）具有正面和侧面; 设置在半导体衬底（2）的主表面上并位于第一电极之间的间隙中的钝化层（6） 布置在第一电极（7）的正面上的导电粘合剂; 以及通过导电粘合剂与相邻的第一电极（7）连接以跨越钝化层（6）的引线构件（15）。 太阳能电池（16）还设置有接触构件（12），接触构件（12）位于间隙（11）中，设置在钝化层（6）的正面上或半导体的主表面 衬底（2）在一个方向上与钝化层（6）对准，并且与下面的引导构件（15）的部分接触。

公开(公告)号：EP2509117A1

公开(公告)日：2012-10-10

申请号：EP10833415.2

申请日：2010-11-30

申请人： Kyocera Corporation

发明人： NIIRA, Koichiro ,  ITO, Norikazu ,  OKUI, Hiroki ,  INABA, Shinichiro

IPC分类号： H01L31/052 ,  H01L31/042

CPC分类号： H01L31/0547 ,  H01L31/048 ,  H01L31/068 ,  H02S40/22 ,  Y02E10/52 ,  Y02E10/547

摘要： A photoelectric conversion module comprises: a substrate 61 having a first surface 61a on which a light is incident and a second surface 61b located at the opposite side of the first surface 61 a; a photoelectric conversion element provided on the second surface 61b of the substrate 61; a light-transmitting member 66 provided on the photoelectric conversion element; and a reflecting member 67 provided on the light-transmitting member 66 and configured to reflect a light having transmitted through the light-transmitting member 66. The reflecting member 67 comprises an inclined light reflection surface 67a that allows a light reflected from the reflecting member 67 to be totally reflected at the first surface 61a of the substrate 61.

摘要翻译： 光电转换模块包括：具有入射光的第一表面61a和位于第一表面61a的相对侧的第二表面61b的基板61; 设置在基板61的第二表面61b上的光电转换元件; 设置在光电转换元件上的透光部件66; 以及设置在透光构件66上并被配置为反射透过透光构件66的光的反射构件67.反射构件67包括倾斜的光反射表面67a，其允许从反射构件67反射的光 在基板61的第一表面61a处被完全反射。

公开(公告)号：EP2481831A1

公开(公告)日：2012-08-01

申请号：EP10818862.4

申请日：2010-09-24

申请人： Kyocera Corporation

发明人： ITO, Norikazu ,  INABA, Shinichiro ,  MATSUI, Hiroshi ,  NIIRA, Koichiro

IPC分类号： C23C16/455 ,  H01L31/04

CPC分类号： C23C16/5096 ,  H01L31/18

摘要： In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heating means located in the introduction path; and a cooling mechanism configured to cool the second electrode.

摘要翻译： 为了形成高品质的电影，而不会导致在面内的不均匀性在薄膜的质量，到用于在本发明的方面的用于形成沉积电影gemäß到包括：腔室; 位于所述腔室中的第一电极; 第二电极也位于与从所述第一电极隔开规定间隔的腔室，并包括配置为供应原料气体供给份多元; 连接到电源的部分，通过该原料气体被引入一个导入路径; 的加热装置位于所述导入通道; 和冷却机构配置成冷却所述第二电极。

公开(公告)号：EP3151286A1

公开(公告)日：2017-04-05

申请号：EP15799245.4

申请日：2015-05-22

申请人： Kyocera Corporation

发明人： ITO, Norikazu ,  MURAO, Akira ,  KUSUHARA, Kenji

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02167 ,  C23C16/401 ,  C23C16/403 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A solar cell element (10) of the present invention includes: a semiconductor substrate (1) including a p-type semiconductor region on one main surface thereof; a passivation layer (9) located on the p-type semiconductor region and containing aluminum oxide; and a protective layer (11) located on the passivation layer (9) and containing silicon oxide which contains hydrogen and carbon.

摘要翻译： 本发明的太阳能电池元件（10）包括：在其一个主表面上包括p型半导体区域的半导体衬底（1）; 位于p型半导体区域上并含有氧化铝的钝化层（9） 以及位于钝化层（9）上并含有含有氢和碳的氧化硅的保护层（11）。