摘要:
Provided is a neutron shielding material having good light transparency and excellent shielding performance against thermal neutron rays, and a method for producing the same. A neutron shielding material according to the present invention includes a light transmitting material and a boron compound enriched in a boron isotope having a mass number of 10, the neutron shielding material being formed of a molded product having light transparency. Shielding performance against thermal neutron rays is improved by containing a boron compound enriched in a boron isotope having a mass number of 10. As a result, the neutron shielding material can be widely applied to members requiring visibility and neutron blocking properties.
摘要:
Provided are a flame-retardant non-aqueous electrolytic solution which exhibits good flame retardancy and has excellent cycle characteristics and electrical resistance characteristics, and a secondary battery using the flame-retardant non-aqueous electrolytic solution. The flame-retardant non-aqueous electrolytic solution according to the present invention contains at least a non-aqueous solvent and an electrolyte dissolved in the non-aqueous solvent, the non-aqueous solvent contains at least one of phosphoric acid esters of chemical formulae (1) to (3) below, the electrolyte contains at least one of a difluorophosphoric acid salt and a nitric acid salt, and the content of the phosphoric acid ester is 20 mass% or more with respect to the total mass of the flame-retardant non-aqueous electrolytic solution:
wherein X1 to X3 each independently represent a hydrocarbon group having 1 to 20 carbon atoms, or the like, and Y1 and Y2 each independently represent a halogen atom.
摘要:
Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.