公开(公告)号：EP4513269A1

公开(公告)日：2025-02-26

申请号：EP24194194.7

申请日：2024-08-12

Applicant: Commissariat à l'Energie Atomique et aux Energies Alternatives

Inventor： MONTMEAT, Pierre ,  FOURNEL, Franck

IPC: G03F7/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/32

Abstract: La présente description concerne un procédé comprenant les étapes suivantes :
a) Coller un substrat-poignée (100) comprenant des éléments en relief (120) avec un substrat d'intérêt (200) comprenant un substrat support (210) recouvert par une couche mince (220) comprenant un matériau sensible à un agent de gravure, moyennant quoi la couche mince (220) comprend des premières zones (Z1) non recouvertes par les éléments en relief (120) et des deuxièmes zones (Z2) recouvertes par lesdits éléments (120),
b) Mettre en contact l'ensemble obtenu avec une solution comprenant un agent hydrophobe, pour recouvrir les premières zones (Z1) par un film hydrophobe (130),
c) Séparer les deux substrats (100, 200),
d) Mettre en contact le substrat d'intérêt (200) avec une solution contenant l'agent de gravure, moyennant quoi on grave le matériau sensible à l'agent de gravure présent dans les deuxièmes zones (Z2) et on forme des motifs (250) en relief.

公开(公告)号：EP4506755A1

公开(公告)日：2025-02-12

申请号：EP23784864.3

申请日：2023-02-27

Applicant: Ycchem Co., Ltd.

Inventor： LEE, Su Jin ,  KIM, Gi Hong ,  LEE, Jeong Hun ,  LEE, Seung Hun ,  LEE, Seung Hyun

IPC: G03F7/11 ,  C08L65/00 ,  C08G61/12 ,  H01L21/308

Abstract: The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3',6'-Dihydroxy-3H-spiro[2-benzofuran-1,9'-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.

公开(公告)号：EP3969188B1

公开(公告)日：2024-11-20

申请号：EP20805126.8

申请日：2020-05-14

Inventor： PHARES, Denis

IPC: B05D1/06 ,  B05D1/32 ,  H01L21/308 ,  H01L21/326 ,  B05B12/28 ,  B05B5/08 ,  B05B5/14 ,  H01M4/04 ,  H01M10/0585 ,  B05D1/12 ,  B05D3/02 ,  H01M10/0525 ,  H01M4/139

公开(公告)号：EP3623867B1

公开(公告)日：2024-08-14

申请号：EP19193091.6

申请日：2019-08-22

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/40 ,  G03F7/42 ,  H01L21/033 ,  H01L21/308

CPC classification number: G03F7/094 ,  G03F7/0752 ,  G03F7/40 ,  G03F7/423 ,  G03F7/0757 ,  G03F7/038 ,  G03F7/0397 ,  H01L21/0337

公开(公告)号：EP4406006A1

公开(公告)日：2024-07-31

申请号：EP22793141.7

申请日：2022-09-22

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： TEYSSEDRE, Hubert ,  POSSEME, Nicolas ,  LANDIS, Stefan

IPC: H01L21/308 ,  B81C1/00 ,  H01L21/266 ,  H01L21/311

CPC classification number: H01L21/3083 ,  H01L21/31144 ,  G03F7/0002 ,  B81C99/009

公开(公告)号：EP4343017A3

公开(公告)日：2024-07-17

申请号：EP23195095.7

申请日：2023-09-04

Applicant: Samsung Display Co., Ltd.

Inventor： HONG, Kyongho ,  KIM, Myungkyu ,  PARK, Sungho ,  PARK, Chang-Kon ,  YOU, Sukbeom ,  LEE, Dongjae

IPC: C23C14/04 ,  H01L21/027 ,  H01L21/308 ,  H10K71/16 ,  G03F1/00

CPC classification number: H10K71/166 ,  C23C14/042 ,  G03F1/00

Abstract: A mask stage includes a stage inclined with respect to a vertical direction perpendicular to a plane defined by a first direction and a second direction intersecting each other, a plurality of first support units disposed between the stage and a mask frame disposed above the stage, and a plurality of second support units disposed on the stage and being adjacent toa lower side of the mask frame. The lower side of the mask frame extends in a first direction, and the second support units are respectively disposed under end portions of the lower side of the mask frame, which are opposite to each other in the first direction.

公开(公告)号：EP3828630B1

公开(公告)日：2024-06-19

申请号：EP20205565.3

申请日：2020-11-03

IPC: G03F1/00 ,  C08G65/00 ,  C08G8/00 ,  C08G65/34 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  H01L21/308

CPC classification number: G03F7/094 ,  G03F7/0752 ,  C08G65/00 ,  C08G65/34 ,  H01L21/0275 ,  H01L21/02118

公开(公告)号：EP4224515A1

公开(公告)日：2023-08-09

申请号：EP23154788.6

申请日：2023-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： CHUNG, Sanggyo ,  LEE, Chanmi ,  YI, Hayoung ,  CHEON, Kwanghee ,  HAN, Seunghee

IPC: H01L21/308 ,  H01L21/033

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of reference patterns (132) and a peripheral pattern (134) on a feature layer (120) by using a first material such that the peripheral pattern (134) is connected to end portions of the plurality of reference patterns (132); forming a plurality of first spacers (142) on both sidewalls of each of the plurality of reference patterns (132) by using a second material; removing the plurality of reference patterns (132); forming a plurality of second spacers (152) on both sidewalls of each of the plurality of first spacers (142) by using the first material; removing the plurality of first spacers (142) so that the plurality of second spacers (152) and the peripheral pattern (134) remain on the feature layer (120); and patterning the feature layer (120) by using the plurality of second spacers (152) and the peripheral pattern (134) as an etch mask.

公开(公告)号：EP4207253A1

公开(公告)日：2023-07-05

申请号：EP22189796.0

申请日：2022-08-10

Applicant: SPTS Technologies Limited

Inventor： Croot, Alex

IPC: H01L21/3065 ,  H01L21/308

Abstract: A method of plasma etching a compound semiconductor substrate to form a feature and plasma etch apparatus for plasma etching a substrate to form a feature are provided.

公开(公告)号：EP3836235B1

公开(公告)日：2022-08-24

申请号：EP20211084.7

申请日：2020-12-01

Inventor： GASSE, Adrien ,  DUSSAIGNE, Amélie ,  LEVY, François

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311