公开(公告)号：EP2549283A1

公开(公告)日：2013-01-23

申请号：EP11756223.1

申请日：2011-03-14

申请人： Kyushu Institute of Technology ,  National University Corporation Nara Institute of Science and Technology ,  Tokyo Metropolitan University

发明人： SATO, Yasuo ,  KAJIHARA, Seiji ,  INOUE, Michiko ,  YONEDA, Tomokazu ,  YI, Hyunbean ,  MIURA, Yukiya

IPC分类号： G01R31/28 ,  H01L21/822 ,  H01L27/04

CPC分类号： G01R31/2884 ,  G01R31/2856 ,  G01R31/3016

摘要： A semiconductor device and the like that can determine the performance of a semiconductor integrated circuit with higher accuracy even when test environment fluctuates. The semiconductor device detects degradation of the semiconductor integrated circuit, including measurement unit that measures temperature and voltage, decision unit that judges whether the test is executed within an allowable test timing in the detection target circuit portion at each test operation frequency and decides a maximum test operation frequency and calculation unit that converts a maximum test operation frequency into that at a standard temperature and voltage and calculates a degradation amount. The semiconductor integrated circuit has a monitor block circuit that monitors the values for the measurement unit to measure temperature and voltage. The measurement unit has estimation unit that estimates temperature and voltage of a detection target circuit portion based on the monitored values. The calculation unit uses the estimated temperature and voltage.