公开(公告)号：EP3104417A2

公开(公告)日：2016-12-14

申请号：EP16173691.3

申请日：2016-06-09

申请人： LG ELECTRONICS INC.

发明人： Yang, Youngsung ,  Kwon, Hyungjin ,  Kim, Chungyi ,  Choi, Junghoon

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L21/316

CPC分类号： H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

公开(公告)号：EP2988336A2

公开(公告)日：2016-02-24

申请号：EP15002380.2

申请日：2015-08-10

申请人： LG Electronics Inc.

发明人： Yang, Youngsung ,  Choi, Junghoon ,  Kim, Chungyi

IPC分类号： H01L31/0224 ,  H01L31/0747 ,  H01L31/0352

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： A solar cell comprises: a semiconductor substrate (10); a tunneling layer (20) formed on a surface of the semiconductor substrate; a p-type conductive region (32) and a n-type conductive region (34) formed on the tunneling layer, the p- and n-type conductive regions being disposed next to each other in a direction parallel to the surface of the semiconductor substrate and being separated by a barrier region (36); and an electrode structure (42, 44) electrically connected to the p- and n-type conductive regions, wherein the barrier region includes an intrinsic semiconductor portion (30c) and a buffer portion (22c) located between the intrinsic semiconductor portion and the tunneling layer, the buffer portion having stronger electrical insulating property than the intrinsic semiconductor portion.

摘要翻译： 一种太阳能电池包括：半导体衬底（10）; 形成在所述半导体衬底的表面上的隧穿层（20） 形成在隧穿层上的p型导电区域（32）和n型导电区域（34），p型和n型导电区域在平行于半导体表面的方向上彼此相邻地设置 衬底并且被阻挡区域（36）分开; 和电连接到所述p型和n型导电区域的电极结构（42,44），其中所述阻挡区域包括本征半导体部分（30c）和位于所述本征半导体部分和所述隧穿之间的缓冲部分（22c） 层，缓冲部分具有比本征半导体部分更强的电绝缘特性。

公开(公告)号：EP3104417A3

公开(公告)日：2017-03-15

申请号：EP16173691.3

申请日：2016-06-09

申请人： LG ELECTRONICS INC.

发明人： Yang, Youngsung ,  Kwon, Hyungjin ,  Kim, Chungyi ,  Choi, Junghoon

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  C23C16/40

CPC分类号： H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

摘要翻译： 公开了一种制造太阳能电池的方法。 该方法包括使用半导体衬底上的绝缘膜形成保护膜（20,24,40），该半导体衬底包括第一导电类型的基底区域（110）并由晶体硅形成。 保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下，在600℃以上的热处理温度下进行的热处理工序。

公开(公告)号：EP2988336A3

公开(公告)日：2016-03-09

申请号：EP15002380.2

申请日：2015-08-10

申请人： LG Electronics Inc.

发明人： Yang, Youngsung ,  Choi, Junghoon ,  Kim, Chungyi

IPC分类号： H01L31/0224 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/0352

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/035209 ,  H01L31/035272 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： A solar cell comprises: a semiconductor substrate (10); a tunneling layer (20) formed on a surface of the semiconductor substrate; a p-type conductive region (32) and a n-type conductive region (34) formed on the tunneling layer, the p- and n-type conductive regions being disposed next to each other in a direction parallel to the surface of the semiconductor substrate and being separated by a barrier region (36); and an electrode structure (42, 44) electrically connected to the p- and n-type conductive regions, wherein the barrier region includes an intrinsic semiconductor portion (30c) and a buffer portion (22c) located between the intrinsic semiconductor portion and the tunneling layer, the buffer portion having stronger electrical insulating property than the intrinsic semiconductor portion.