公开(公告)号：EP2482327A2

公开(公告)日：2012-08-01

申请号：EP12000546.7

申请日：2012-01-27

申请人： LG Electronics Inc.

发明人： Shim, Seunghwan ,  Kim, Jinah ,  Nam, Jeongbeom ,  Chung, Indo ,  Yang, Juhong ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/0224

CPC分类号： H01L31/068 ,  H01L31/02168 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate containing first impurities of a first conductive type, an anti-reflection layer which is positioned on the semiconductor substrate and has a fixed charge of the first conductive type, an ohmic contact region in which second impurities of a second conductive type different from the first conductive type of the first impurities of the semiconductor substrate are selectively positioned at the semiconductor substrate, a plurality of first electrodes which are positioned on the ohmic contact region and are connected to the ohmic contact region, and a second electrode connected to the semiconductor substrate.

摘要翻译： 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的第一杂质的半导体衬底，位于半导体衬底上的具有固定电荷的第一导电类型的抗反射层，其中第二导电类型的第二杂质的欧姆接触区域 不同于第一导电类型的半导体衬底的第一杂质的导电类型选择性地定位在半导体衬底上，位于欧姆接触区上并连接到欧姆接触区的多个第一电极和第二电极 连接到半导体衬底。

公开(公告)号：EP3104417A2

公开(公告)日：2016-12-14

申请号：EP16173691.3

申请日：2016-06-09

申请人： LG ELECTRONICS INC.

发明人： Yang, Youngsung ,  Kwon, Hyungjin ,  Kim, Chungyi ,  Choi, Junghoon

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  H01L21/316

CPC分类号： H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

公开(公告)号：EP2551915A1

公开(公告)日：2013-01-30

申请号：EP12005116.4

申请日：2012-07-11

申请人： LG Electronics Inc.

发明人： Yang, Juhong ,  Kim, Jinah ,  Nam, Jeongbeom ,  Yang, Dohwan ,  Chung, Indo ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/0216 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/0236

CPC分类号： H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547

摘要： A solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a front electrode part electrically connected to the emitter region, and a back electrode part electrically connected to the substrate. The substrate includes a first area formed of single crystal silicon and a second area formed of polycrystalline silicon. A thickness of the anti-reflection layer positioned in the first area is less than a thickness of the anti-reflection layer positioned in the second area.

摘要翻译： 一种太阳能电池包括：第一导电类型的衬底;与第一导电类型相反的第二导电类型的发射极区域，其与衬底一起形成pn结;位于发射极区域上的抗反射层;前电极 与发射极区域电连接的部分以及与基板电连接的背面电极部分。 衬底包括由单晶硅形成的第一区域和由多晶硅形成的第二区域。 位于第一区域中的抗反射层的厚度小于位于第二区域中的抗反射层的厚度。

公开(公告)号：EP2822041A1

公开(公告)日：2015-01-07

申请号：EP14002285.6

申请日：2014-07-03

申请人： LG Electronics, Inc.

发明人： Kwon, Hyungjin ,  Park, Hyunjung ,  Choi, Junghoon ,  Park, Changseo

IPC分类号： H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/547 ,  Y02P70/521

摘要： Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

摘要翻译： 讨论了一种太阳能电池，其包括半导体衬底，在半导体衬底的一个表面上形成的隧穿层，在隧穿层的表面上形成的第一导电半导体层和在隧穿层的表面上形成的第二导电半导体层。 分离部分将第一和第二导电半导体层彼此分开，并且在隧穿层的表面上与第一和第二导电半导体层之间的边界的至少一部分相对应的位置处形成。

公开(公告)号：EP2482327A3

公开(公告)日：2013-10-02

申请号：EP12000546.7

申请日：2012-01-27

申请人： LG Electronics Inc.

发明人： Shim, Seunghwan ,  Kim, Jinah ,  Nam, Jeongbeom ,  Chung, Indo ,  Yang, Juhong ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/02168 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate containing first impurities of a first conductive type, an anti-reflection layer which is positioned on the semiconductor substrate and has a fixed charge of the first conductive type, an ohmic contact region in which second impurities of a second conductive type different from the first conductive type of the first impurities of the semiconductor substrate are selectively positioned at the semiconductor substrate, a plurality of first electrodes which are positioned on the ohmic contact region and are connected to the ohmic contact region, and a second electrode connected to the semiconductor substrate.

摘要翻译： 讨论太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的第一杂质的半导体衬底，位于半导体衬底上且具有第一导电类型的固定电荷的抗反射层，其中第二杂质为第二导电类型的第二杂质 与半导体衬底的第一杂质的第一导电类型不同的非导电类型选择性地位于半导体衬底处;多个第一电极，位于欧姆接触区上并连接到欧姆接触区;以及第二电极 连接到半导体衬底。

公开(公告)号：EP2477235A2

公开(公告)日：2012-07-18

申请号：EP12000181.3

申请日：2012-01-13

申请人： LG Electronics Inc.

发明人： Chung, Indo ,  Kim, Jinah ,  Nam, Jeongbeom ,  Yang, Juhong ,  Shim, Seunghwan ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/18

CPC分类号： H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a solar cell includes forming an impurity doped region of a second conductive type at a substrate of a first conductive type, sequentially irradiating laser shots onto the impurity doped region of the substrate to form an emitter part including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, and forming a plurality of first electrodes connected to the second emitter region and forming a second electrode connected to the substrate.

摘要翻译： 一种制造太阳能电池的方法包括在第一导电类型的基板上形成第二导电类型的杂质掺杂区域，依次将激光照射到衬底的杂质掺杂区域上，形成发射极部分，该发射极部分包括具有 第一片电阻和第二发射极区，具有小于第一片电阻的第二片电阻，以及形成连接到第二发射极区的多个第一电极并形成连接到衬底的第二电极。

公开(公告)号：EP3104417A3

公开(公告)日：2017-03-15

申请号：EP16173691.3

申请日：2016-06-09

申请人： LG ELECTRONICS INC.

发明人： Yang, Youngsung ,  Kwon, Hyungjin ,  Kim, Chungyi ,  Choi, Junghoon

IPC分类号： H01L31/0216 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0236 ,  C23C16/40

CPC分类号： H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

摘要： Disclosed is a method of manufacturing a solar cell. The method includes forming a protective (20, 24, 40) film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area (110) of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

摘要翻译： 公开了一种制造太阳能电池的方法。 该方法包括使用半导体衬底上的绝缘膜形成保护膜（20,24,40），该半导体衬底包括第一导电类型的基底区域（110）并由晶体硅形成。 保护膜的形成包括在具有卤素元素的卤素气体的气体气氛下，在600℃以上的热处理温度下进行的热处理工序。

公开(公告)号：EP2955760A1

公开(公告)日：2015-12-16

申请号：EP15001721.8

申请日：2015-06-10

申请人： LG Electronics Inc.

发明人： Yang, Youngsung ,  Choi, Junghoon ,  Park, Changseo ,  Kwon, Hyungjin

IPC分类号： H01L31/0368 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

摘要： Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

摘要翻译： 讨论了制造太阳能电池的方法。 该方法包括在半导体衬底上形成隧穿层; 在隧穿层上形成半导体层，其中形成半导体层包括沉积半导体材料; 并形成连接到半导体层的电极。 隧道层在高于室温的温度和低于大气压的压力下形成。

公开(公告)号：EP2477235B1

公开(公告)日：2014-07-30

申请号：EP12000181.3

申请日：2012-01-13

申请人： LG Electronics Inc.

发明人： Chung, Indo ,  Kim, Jinah ,  Nam, Jeongbeom ,  Yang, Juhong ,  Shim, Seunghwan ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/068 ,  H01L31/18

CPC分类号： H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2477235A3

公开(公告)日：2013-01-09

申请号：EP12000181.3

申请日：2012-01-13

申请人： LG Electronics Inc.

发明人： Chung, Indo ,  Kim, Jinah ,  Nam, Jeongbeom ,  Yang, Juhong ,  Shim, Seunghwan ,  Jung, Ilhyoung ,  Kwon, Hyungjin

IPC分类号： H01L31/18

CPC分类号： H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a solar cell includes forming an impurity doped region of a second conductive type at a substrate of a first conductive type, sequentially irradiating laser shots onto the impurity doped region of the substrate to form an emitter part including a first emitter region having a first sheet resistance and a second emitter region having a second sheet resistance less than the first sheet resistance, and forming a plurality of first electrodes connected to the second emitter region and forming a second electrode connected to the substrate.