摘要:
A semiconductor device is provided having a circuit for measuring a propagation delay related to metal layers formed on the device. In one embodiment, the circuit includes a first bond pad connected to an input of a first signal path, the first signal path including a first plurality of serially connected logic gates wherein the connection between each logic gate of the first plurality is formed on a first metal layer and a second bond pad connected to an output of a second signal path, the second signal path including a second plurality of serially connected logic gates wherein the connection between each logic gate of the second plurality is formed on a second metal layer, the second signal path being in electrical communication with the first signal path.