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    TRANSVERSAL ELEKTRISCH ANGEREGTER GASENTLADUNGSLASER ZUR ERZEUGUNG VON LICHTPULSEN MIT HOHER PULSFOLGEFREQUENZ UND VERFAHREN ZUR HERSTELLUNG
    1.
    发明公开
    TRANSVERSAL ELEKTRISCH ANGEREGTER GASENTLADUNGSLASER ZUR ERZEUGUNG VON LICHTPULSEN MIT HOHER PULSFOLGEFREQUENZ UND VERFAHREN ZUR HERSTELLUNG 有权
    横截电动激励气体放电激光器，用于生成与高频脉冲序列和方法的光脉冲用于生产

    公开(公告)号：EP1883999A2

    公开(公告)日：2008-02-06

    申请号：EP06753205.1

    申请日：2006-05-23

    申请人： LTB-Lasertechnik Berlin GmbH

    发明人： SCHOLZ, Matthias ,  SCHURACK, Johannes ,  SPRANZ, Edgar ,  SEGSA, Karl, Heinz ,  MÜLLER, Joachim

    IPC分类号： H01S3/03 ,  H01S3/0971 ,  H01S3/0975 ,  H01S3/105 ,  H01S3/038

    CPC分类号： H01S3/09713 ,  H01S3/03 ,  H01S3/0384 ,  H01S3/0385 ,  H01S3/0388 ,  H01S3/0975 ,  H01S3/105

    摘要： Gas discharge lasers comprise a discharge tube, main and auxiliary electrodes, resonator mirrors and an electrical excitation circuit, which generates light pulses in a sub-nanosecond range. Said lasers have a large application spectrum, for example in the form of an excitation or ionisation light source for different spectroscopy methods associated with an UV-microscope. The known gas discharge lasers are provided with different seals in the discharge tube area at a final assembly stage and are unable to be adjusted afterwards. The inventive maintenance-free gas discharge laser (GL) exhibits a performance of about 100 millions light pulses, the main electrodes (HE1, HE2) are mounted, for the accurate adjustment thereof, in deformable carrier baths (TW) and the resonator mirrors (RS) are mounted in deformable carrier baths (TR), wherein said baths are assembled by hard soldering (HL) in such a way that they are integrally jointed with partial metal layers (MB) on the discharge tube (ER). All ultra-high vacuum-suitable components are sintered in such a way that water is completely removed at a second water limit (355°C). The preferred production method consists in carrying out hard soldering, at greater than 900 °C, of the carrying components with the metal layers (MB) on the discharge tube (ER), in welding the resonator (RS) mirrors, in sintering at the second water limit and subsequently in carrying out the accurate adjustment.

    HOCHLEISTUNGSSCHALTMODUL UND VERFAHREN ZUR ERZEUGUNG VON SCHALTSYNCHRONITÄT BEI EINEM HOCHLEISTUNGSSCHALTMODUL
    4.
    发明公开
    HOCHLEISTUNGSSCHALTMODUL UND VERFAHREN ZUR ERZEUGUNG VON SCHALTSYNCHRONITÄT BEI EINEM HOCHLEISTUNGSSCHALTMODUL 有权
    大功率开关模块和方法，高功率开关模块生产开关同步

    公开(公告)号：EP2020082A2

    公开(公告)日：2009-02-04

    申请号：EP07764334.4

    申请日：2007-05-20

    申请人： LTB-Lasertechnik Berlin GmbH ,  Spree Hybrid & Kommunikationstechnik GmbH

    发明人： SCHURACK, Johannes ,  TROMPA, Thomas ,  SEGSA, Karl Heinz ,  MÜLLER, Joachim

    IPC分类号： H03K17/10

    CPC分类号： H03K17/102 ,  H03K17/0822 ,  H03K17/161 ,  H03K17/284 ,  H03K17/691

    摘要： Previously known high-power switching modules are provided with serially connected individual switching stages, each of which encompasses a semiconductor switch and a triggering network that is fitted with a fixed control resistor, each semiconductor switch being set to a fixed operating point by means of said triggering network without taking into account operating conditions that vary over time, thus preventing the switching process from being highly synchronized. In order to obtain high switching synchronism (switching on and off) within a tight time slot (ZF) of less than 1.5 ns, the inventive high-power switching module comprises a delaying element (VEN) with a passive compensation loop or an active control loop in each switching stage (SSN) in addition to symmetrizing resistors (ERN) that are connected parallel to the semiconductor switches (HLN) so as to evenly distribute the voltage in the triggering network (ANN). Said delaying element (VEN) takes into account the switching time of the semiconductor switches (HLN), which is different as a result of operating conditions, by continuously adjusting an offset voltage for each switching stage from a component-related basic static value and a voltage-related and temperature-related dynamic temporary value, and thus by delaying all semiconductor switches (HLN) relative to one another in a variably adjustable manner for each switching stage.