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公开(公告)号:EP0903777A1
公开(公告)日:1999-03-24
申请号:EP97946114.2
申请日:1997-12-04
IPC分类号: H01L21/302 , G03F7/26
CPC分类号: G03F7/091 , H01L21/31138 , H01L21/32139
摘要: After an organic bottom anti-reflective coating (12) is deposited on an underlying film (11), a resist pattern (15) is formed on the organic bottom anti-reflective coating (12). Dry etching is performed with respect to the organic bottom anti-reflective coating (12) masked with the resist pattern (15) to form an anti-reflective coating pattern. The dry-etching of the organic bottom anti-reflective coating (12) is performed by using etching gas containing gas having the S component such as SO 2 /O 2 -based etching gas or COS/O 2 -based etching gas.