利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.012 秒)

    Pattern formation material and method
    1.
    发明公开
    Pattern formation material and method 审中-公开
    图案形成材料和方法

    公开(公告)号：EP1134617A2

    公开(公告)日：2001-09-19

    申请号：EP01105830.2

    申请日：2001-03-08

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Kishimura, Shinji ,  Sasago, Masaru ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/039 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/146

    摘要： In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1, and an acid generator,
    wherein R 1 and R 2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.

    摘要翻译： 在本发明的图案形成方法中，抗蚀剂膜通过将包含含有由化学式1表示的第一单元的聚合物和酸生成剂的图案形成材料施加在基板上来形成，其中R1和R2相同 或不同并且选自由烷基，氯原子和包含氯原子的烷基组成的组。 然后，对抗蚀剂膜照射1nm至30nm波段或110nm至180nm波段的曝光用于图案曝光，并且在图案曝光之后通过显影抗蚀剂膜来形成抗蚀剂图案。

    Pattern forming method and semiconductor processing method
    2.
    发明公开
    Pattern forming method and semiconductor processing method 失效
    黑曜石和Verfahren zur Erzeugung von Mustern的Behandlungsmethode

    公开(公告)号：EP0860743A2

    公开(公告)日：1998-08-26

    申请号：EP98103054.7

    申请日：1998-02-20

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Matsuo, Takahiro ,  Endo, Masayuki ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/26

    CPC分类号： G03F7/265

    摘要： A resist film which generates a sulfonic acid through irradiation with an energy beam is irradiated with a KrF excimer laser beam through a mask to generate a sulfonic acid in the exposed area. Then, a semiconductor substrate is immersed in a solution of polysiloxane having an amino group, and dried. This causes the electrostatic adsorption of the polysiloxane having an ammonium ion on the surface of the exposed area of the resist film where a sulfonic acid ion is present to form a polysiloxane film. Thereafter, the resist film is subjected to O 2 plasma etching by using the polysiloxane film as a mask to form a resist pattern.

    摘要翻译： 通过用能量束照射产生磺酸的抗蚀剂膜通过掩模用KrF准分子激光束照射，以在曝光区域产生磺酸。 然后，将半导体基板浸渍在具有氨基的聚硅氧烷的溶液中，并干燥。 这导致在存在磺酸离子的抗蚀剂膜的暴露区域的表面上具有铵离子的聚硅氧烷的静电吸附形成聚硅氧烷膜。 此后，通过使用聚硅氧烷膜作为掩模对抗蚀剂膜进行O 2等离子体蚀刻以形成抗蚀剂图案。

    Patterning material and patterning method
    3.
    发明公开
    Patterning material and patterning method 失效
    Mustermaterial und Musterverfahren

    公开(公告)号：EP0773478A1

    公开(公告)日：1997-05-14

    申请号：EP96117967.8

    申请日：1996-11-08

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Matsuo, Takahiro ,  Endo, Masayuki ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  C08F8/30 ,  G03F7/0045 ,  G03F7/38

    摘要： A patterning material includes a polymer represented by a general formula:
       wherein R 1 indicates a hydrogen atom or an alkyl group; R 2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R 3 indicates a hydrogen atom or an alkyl group; R 4 and R 5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0

    摘要翻译： 图案形成材料包括由以下通式表示的聚合物：其中R1表示氢原子或烷基; R2表示通过酸的功能容易解吸的疏水性保护基; R3表示氢原子或烷基; R4和R5独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基或具有苯基的环状烷基或烯基; x满足0 的关系

    Pattern forming material and pattern forming method
    4.
    发明公开
    Pattern forming material and pattern forming method 失效
    的图像形成材料和方法

    公开(公告)号：EP0791856A3

    公开(公告)日：1998-01-14

    申请号：EP97101914.6

    申请日：1997-02-06

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Matsuo, Takahiro ,  Endo, Masayuki ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/004

    CPC分类号： G03F7/265 ,  G03F7/0045 ,  G03F7/039

    摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group:
       wherein R 1 indicates a hydrogen atom or an alkyl group; R 2 and R 3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R 4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0

    Patterning material and patterning method
    7.
    发明公开
    Patterning material and patterning method 失效
    Mustermaterial und Musterverfahren

    公开(公告)号：EP0877295A2

    公开(公告)日：1998-11-11

    申请号：EP98108456.9

    申请日：1996-11-08

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Matsuo, Takahiro ,  Endo, Masayuki ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/26

    CPC分类号： G03F7/039 ,  C08F8/30 ,  G03F7/0045 ,  G03F7/38

    摘要： A patterning material includes a polymer represented by a general formula:
       wherein R 6 indicates a hydrophobic protecting group which is easily desorbed through a function of said acid; R 7 indicates a hydrogen atom or an alkyl group; R 8 and R 9 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0

    摘要翻译： 图案形成材料包括由以下通式表示的聚合物：其中R6表示通过所述酸的功能容易解吸的疏水性保护基; R7表示氢原子或烷基; R8和R9独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基或具有苯基的环状烷基或烯基; x满足0 的关系

    Pattern forming method
    10.
    发明公开
    Pattern forming method 失效
    维尔法赫尔·赫斯特伦

    公开(公告)号：EP1028353A1

    公开(公告)日：2000-08-16

    申请号：EP00105601.9

    申请日：1998-02-19

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Endo, Masayuki ,  Shirai, Masamitsu ,  Tsunooka, Masahiro

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/26

    CPC分类号： G03F7/2022 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/265 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/124 ,  Y10S522/904

    摘要： The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula:
    where R 1 indicates a hydrogen atom or an alkyl group, and R 2 and R, independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.

    摘要翻译： 本发明的图案形成材料包括具有当聚合物被能量束照射或加热时产生酸的基团的聚合物和当化合物被能量束照射时产生碱的化合物。 该聚合物是通过使另一个基团与下列通式表示的化合物进行聚合得到的较高程度的二元聚合物或聚合物：其中R1表示氢原子或烷基，R2和R独立地表示 氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基，具有苯基的环状烷基或具有苯基的环状链烯基。