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1.发明公开
公开(公告)号：EP4451061A1
公开(公告)日：2024-10-23
申请号：EP21968294.5
申请日：2021-12-22
发明人： KIM, Jaehyun , HUR, Myoung Hyun , KIM, Jeong Sik , YOO, Min Ja , LEE, Hyung Kun , JI, Chanhyuk , JANG, Gyeonghun , HA, Jeongmin
IPC分类号： G03F7/004 , C07C323/20 , C07C323/21
摘要： The present disclosure relates to: a photoacid generator comprising an anion having a novel structure having a specific polar functional group such as a sulfonate group, a photoresist composition comprising the same, and a method for forming a photoresist pattern.
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2.发明公开
公开(公告)号：EP4446812A1
公开(公告)日：2024-10-16
申请号：EP24165781.6
申请日：2024-03-25
发明人： FUKUSHIMA, Masahiro
摘要： An alkanesulfone type onium salt whose anion has a bulky substituent at α-position of a sulfo group and a bulky aromatic ring structure is capable of generating an acid having an adequate acid strength and controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is provided.
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公开(公告)号：EP4443241A2
公开(公告)日：2024-10-09
申请号：EP24166719.5
申请日：2024-03-27
发明人： FUKUSHIMA, Masahiro , WATANABE, Satoshi , MASUNAGA, Keiichi , KOTAKE, Masaaki , MATSUZAWA, Yuta
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A chemically amplified negative resist composition comprising (A) a photoacid generator in the form of an onium salt of aromatic sulfonic acid whose anion has a ring structure fused to an aromatic ring having a sulfo group bonded thereto and another aromatic ring structure containing a bulky substituent and (B) a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER and fidelity.
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公开(公告)号：EP4443239A2
公开(公告)日：2024-10-09
申请号：EP24165949.9
申请日：2024-03-25
发明人： FUKUSHIMA, Masahiro
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/0392
摘要： A chemically amplified positive resist composition is provided comprising (A) a quencher in the form of an onium salt having a conjugated acid anion which is decomposed into carbon dioxide and an organic compound having no more than 12 carbon atoms and (B) a base polymer containing a specific polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. The resist composition exhibits a high resolution during pattern formation and forms a pattern with improved LER, fidelity and dose margin.
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5.发明授权
公开(公告)号：EP2988172B1
公开(公告)日：2024-10-09
申请号：EP15178638.1
申请日：2011-05-30
IPC分类号： G03F7/004
CPC分类号： G03F7/0042 , Y10T428/24355
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公开(公告)号：EP4430097A1
公开(公告)日：2024-09-18
申请号：EP22817567.5
申请日：2022-11-10
申请人： Merck Patent GmbH
发明人： BASKARAN, Durairaj , KANG, Namgoo , NG, Edward W.
IPC分类号： C08F220/30 , C09D133/10 , G03F7/004 , G03F7/26 , H01L21/02 , C08F8/12
CPC分类号： C08F220/30 , C09D133/10 , C08F8/12 , H01L21/0273 , G03F7/0002
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7.发明公开
公开(公告)号：EP4421563A1
公开(公告)日：2024-08-28
申请号：EP22883481.8
申请日：2022-10-14
发明人： MARUYAMA, Hitoshi
摘要： Provided is a photosensitive resin composition that contains: (A) a silicone resin containing an acid-crosslinkable group; (B) an epoxy compound represented by formula (B); and (C) a photoacid generator.
(In the formula, R51-R55 each independently represent a hydrogen atom or a saturated hydrocarbyl group having 1-6 carbon atoms.)-
公开(公告)号：EP4411479A1
公开(公告)日：2024-08-07
申请号：EP22876139.1
申请日：2022-09-26
发明人： TANIGAWA, Masahito , IWASHITA, Yuji
摘要： The present invention provides a photosensitive resin printing plate precursor for relief printing that can achieve both gradation print reproducibility of a highlight part and plate life, and that has a low plate-surface adhesiveness.
A photosensitive resin printing plate precursor for relief printing, wherein the photosensitive resin printing plate precursor comprises a support, a photosensitive resin layer, and a cover film stacked in this order, wherein the photosensitive resin layer comprises a lower layer present on a support side and an upper layer present on a cover-film side, wherein the upper layer is a photosensitive resin layer that contains a water-soluble or water-dispersible resin (A) having a glass transition temperature measured by differential scanning calorimeter of 40 to 90°C, wherein the upper layer has a thickness of 3 to 30 micrometers, wherein the lower layer is a layer that contains a water-soluble or water-dispersible resin (B) having a glass transition temperature higher than the glass transition temperature of the water-soluble or water-dispersible resin (A) by 5°C or more, and wherein the glass transition temperature of the resin (B) measured by differential scanning calorimeter is 95 to 135°C.-
公开(公告)号：EP4397503A1
公开(公告)日：2024-07-10
申请号：EP22864266.6
申请日：2022-08-17
申请人： FUJIFILM Corporation
发明人： NAMBA, Yusuke , WATANABE, Shumpei
摘要： A stack including: a lithographic printing plate precursor including an image-recording layer which contains an infrared absorber, a polymerizable compound, and a polymerization initiator; and an interleaving paper stacked on the lithographic printing plate precursor, in which air permeation resistance of the interleaving paper is 55 seconds or more, or a stack including: a lithographic printing plate precursor including an image-recording layer which contains an infrared absorber, a polymerizable compound, and a polymerization initiator; and an interleaving paper stacked on the lithographic printing plate precursor, in which the interleaving paper is overlapped with the lithographic printing plate precursor to be in contact with a surface of the lithographic printing plate precursor on an image-recording layer side, and a color difference ΔE of the image-recording layer before and after storage in a dark room in an environment of 25°C and 55 %RH for 3 days is less than 3.0.
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公开(公告)号：EP4394506A1
公开(公告)日：2024-07-03
申请号：EP23178646.8
申请日：2023-06-12
发明人： KOH, Haengdeog , KANG, Cheol , KWAK, Yoonhyun , KIM, Minsang , LEE, Sunyoung , LEE, Changheon , IM, Kyuhyun , CHAE, Jungha , HAN, Sunghyun
CPC分类号： G03F7/0042 , G03F7/0045 , C07F7/2224
摘要： Provided are a resist composition and a method of forming a pattern using the same, the resist composition including an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below:
Formula 1 M11(R11)n(OR12)(4-n),
wherein, in Formulas 1 and 2, M11, R11, R12, n, A21, L21 to L23, a21 to a23, R21 to R24, b22, p, and X21 are as described in the specification.
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