专利检索 ap:("MEMC Electronic Materials, Inc.") AND inv:"RAVANI, Marco" 第 1 页

1.

发明公开
SUPPRESSION OF OXYGEN PRECIPITATION IN HEAVILY DOPED SINGLE CRYSTAL SILICON SUBSTRATES 审中-公开
标题翻译：抑制的高度掺杂SILIZIUMEINKRISTALLSUBSTRATEN的氧分离的

公开(公告)号：EP2168150A1

公开(公告)日：2010-03-31

申请号：EP08771993.6

申请日：2008-06-26

申请人： MEMC Electronic Materials, Inc.

发明人： FALSTER, Robert, J. , MOIRAGHI, Luca , LEE, Dong Myun , CHO, Chanrae , RAVANI, Marco

IPC分类号： H01L21/322

CPC分类号： H01L21/3225 , Y10T428/21

摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.

2.

发明公开
DIFFUSION CONTROL IN HEAVILY DOPED SUBSTRATES 审中-公开
标题翻译：扩散控制在强掺杂的衬底

公开(公告)号：EP2162902A2

公开(公告)日：2010-03-17

申请号：EP08781003.2

申请日：2008-06-26

申请人： MEMC Electronic Materials, Inc.

发明人： FALSTER, Robert, J. , MOIRAGHI, Luca , LEE, Dong, Myun , CHO, Chanrae , RAVANI, Marco , VORONKOV, Vladimir, V.

IPC分类号： H01L21/22 , H01L21/20 , H01L21/265 , H01L21/322

CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961

摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.