公开(公告)号：EP0902968A1

公开(公告)日：1999-03-24

申请号：EP97945682.0

申请日：1997-11-26

申请人： MITEL CORPORATION

发明人： OUELLET, Luc ,  TREMBLAY, Yves ,  GENDRON, Luc

IPC分类号： H01L21

CPC分类号： H01L21/76846 ,  H01L21/76856

摘要： A method of manufacturing a semiconductor device which includes an interface between a metal layer and a barrier layer of a nitride of a refractory metal, comprising the steps of depositing the barrier layer onto a wafer at high temperature; subjecting the barrier layer to a mixture of oxygen or an oxygen-containing gas and an inert gas in the presence of a plasma at low pressure and for a time sufficient to oxidize the surface of the barrier layer; removing the oxygen-containing gas; and depositing the metal layer onto the oxidized surface without subjecting said wafer to an air break. The method permits high throughput to be achieved at low cost.