公开(公告)号：EP3199662A4

公开(公告)日：2018-05-02

申请号：EP15845101

申请日：2015-09-17

申请人： MITSUBISHI MATERIALS CORP

发明人： UMEMOTO KEITA ,  ZHANG SHOUBIN ,  URAYAMA KOUTAROU

IPC分类号： C23C14/34 ,  B22F1/00 ,  C22C1/04 ,  C22C9/00 ,  C22C28/00 ,  C22C32/00

CPC分类号： C23C14/3414 ,  B22F1/00 ,  B22F3/1007 ,  B22F9/082 ,  B22F2201/01 ,  B22F2301/10 ,  C22C1/0425 ,  C22C9/00 ,  C22C28/00 ,  C22C32/00 ,  C23C14/0623 ,  C23C14/14 ,  H01J37/3426

摘要： A sputtering target, which has a component composition including: 30.0-67.0 atomic% of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which ¸ phases made of Cu-Ga alloy are dispersed in a matrix of the ³ phases made of Cu-Ga alloy, is provided.