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1.发明公开Substrate power supply contact for power integrated circuits 失效Stromversorgungskontakt im Substratfürintegrierte Leistungsschaltkreise。
公开(公告)号：EP0379878A1
公开(公告)日：1990-08-01
申请号：EP90100283.2
申请日：1990-01-08
申请人： MOTOROLA, INC.
IPC分类号： H01L27/088 , H01L27/06 , H01L23/535
CPC分类号： H01L27/0229 , H01L24/05 , H01L27/0214 , H01L27/0218 , H01L2224/04042 , H01L2224/05554 , H01L2224/48091 , H01L2224/48257 , H01L2924/1306 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： An integrated circuit (13) having both logic transistors and at least one power switching transistor (25) formed on the same substrate (21) is described, wherein both sets of transistors are powered by current received from the substrate (21), the power transistor (25) being powered by current flowing directly from the substrate (21), and the logic transistors being powered by current flowing through a metal layer (28) making electrical contact (27) to the substrate (21).
摘要翻译： 描述了具有形成在同一衬底（21）上的逻辑晶体管和至少一个功率开关晶体管（25）的集成电路（13），其中两组晶体管由从衬底（21）接收的电流供电，功率 晶体管（25）由直接从衬底（21）流出的电流供电，并且逻辑晶体管由流过金属层（28）的电流供电，从而使电接触（27）到衬底（21）。
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公开(公告)号：EP0341460A3
公开(公告)日：1991-03-13
申请号：EP89107081.5
申请日：1989-04-20
申请人： MOTOROLA, INC.
CPC分类号： H03K17/08146 , H03K17/063 , Y10T307/839 , Y10T307/858
摘要： A reverse battery and loss of positive supply voltage detector circuit includes a power field effect transistor (14) for switching a stored inductive energy to the ground supply voltage terminal (3) if there is a disruption in the power supply. A detector circuit (4-8, 11-13) senses a reversal of the supply voltage connections as would happen if the battery were connected backwards and enables the power field effect transistor (14) for discharging a negative voltage that may have developed across an inductive load (17). The detector circuit (4-8, 11-13) further senses a loss of the positive supply voltage (1) and enables the power field effect transistor (14) for discharging a negative voltage that may have developed across an inductive load (17) due to the disruption of applied power.
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公开(公告)号：EP0341460B1
公开(公告)日：1993-12-22
申请号：EP89107081.5
申请日：1989-04-20
申请人： MOTOROLA, INC.
CPC分类号： H03K17/08146 , H03K17/063 , Y10T307/839 , Y10T307/858
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4.发明公开
公开(公告)号：EP0336194A2
公开(公告)日：1989-10-11
申请号：EP89104970.2
申请日：1989-03-20
申请人： MOTOROLA, INC.
CPC分类号： H02H9/046 , H03K17/0822
摘要： A power field effect transistor driver circuit manufacturable in a MOS process is provided wherein a power field effect transistor (8) provides high current drive capability for driving fractional horsepower DC motors or other inductive loads (9). The power field effect transistor driver circuit provides reliable operation under environmentally harsh conditions such as overvoltage transients at the supply voltage terminals (1,2), loss of ground supply terminal (2) connection, and short circuits at the load terminal (3).
摘要翻译： 提供了可在MOS工艺中制造的功率场效应晶体管驱动电路，其中功率场效应晶体管（8）提供用于驱动分数马力的直流电动机或其它感性负载（9）的高电流驱动能力。 功率场效应晶体管驱动电路在环境恶劣的条件下提供可靠的工作，例如电源端子（1,2）的过压瞬变，接地电源端子（2）连接的损耗和负载端子（3）的短路。
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公开(公告)号：EP0336194A3
公开(公告)日：1990-04-25
申请号：EP89104970.2
申请日：1989-03-20
申请人： MOTOROLA, INC.
CPC分类号： H02H9/046 , H03K17/0822
摘要： A power field effect transistor driver circuit manufacturable in a MOS process is provided wherein a power field effect transistor (8) provides high current drive capability for driving fractional horsepower DC motors or other inductive loads (9). The power field effect transistor driver circuit provides reliable operation under environmentally harsh conditions such as overvoltage transients at the supply voltage terminals (1,2), loss of ground supply terminal (2) connection, and short circuits at the load terminal (3).
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公开(公告)号：EP0342581A1
公开(公告)日：1989-11-23
申请号：EP89108739.7
申请日：1989-05-16
申请人： MOTOROLA, INC.
摘要： A voltage level conversion circuit manufacturable in a standard semiconductor process is provided wherein an output voltage having a magnitude greater than the supply voltage and greater than the gate oxide breakdown voltage of the MOS devices is produced. A voltage level shifter circuit (13) alternately charges a pair of capacitors (32,33) which in turn alternately charges a second pair of capacitors (34,39). The second pair of capacitors (34,39) is coupled to the output (40) to produce the shifted output voltage having a frequency that is double the frequency of the input to the voltage level shifter circuit.
摘要翻译： 提供可在标准半导体工艺中制造的电压电平转换电路，其中产生具有大于电源电压且大于MOS器件的栅极氧化物击穿电压的幅度的输出电压。 电压电平移位器电路（13）交替地对一对电容器（32,33）进行充电，电容器又交替地对第二对电容器（34,39）充电。 第二对电容器（34,39）耦合到输出端（40）以产生具有与输入到电压电平移位器电路的频率的两倍的频率的移位输出电压。
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公开(公告)号：EP0341460A2
公开(公告)日：1989-11-15
申请号：EP89107081.5
申请日：1989-04-20
申请人： MOTOROLA, INC.
CPC分类号： H03K17/08146 , H03K17/063 , Y10T307/839 , Y10T307/858
摘要： A reverse battery and loss of positive supply voltage detector circuit includes a power field effect transistor (14) for switching a stored inductive energy to the ground supply voltage terminal (3) if there is a disruption in the power supply. A detector circuit (4-8, 11-13) senses a reversal of the supply voltage connections as would happen if the battery were connected backwards and enables the power field effect transistor (14) for discharging a negative voltage that may have developed across an inductive load (17). The detector circuit (4-8, 11-13) further senses a loss of the positive supply voltage (1) and enables the power field effect transistor (14) for discharging a negative voltage that may have developed across an inductive load (17) due to the disruption of applied power.
摘要翻译： 反向电池和正电源电压检测器电路的损耗包括用于在存在电源中断的情况下将存储的感应能量切换到接地电源电压端子（3）的功率场效应晶体管（14）。 检测器电路（4-8,11-13）感测到电源电压连接的反转，如果电池被向后连接并且使功率场效应晶体管（14）能够放电可能在 感性负载（17）。 检测器电路（4-8,11-13）进一步检测正电源电压（1）的损耗，并且使功率场效应晶体管（14）能够放电可能在感性负载（17）上产生的负电压， 由于施加电力的中断。
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