公开(公告)号：EP0336194A3

公开(公告)日：1990-04-25

申请号：EP89104970.2

申请日：1989-03-20

申请人： MOTOROLA, INC.

发明人： Dunn, William Charles ,  McEntarfer, Philip W.

IPC分类号： H02P7/285 ,  H02H9/04 ,  H03K17/08

CPC分类号： H02H9/046 ,  H03K17/0822

摘要： A power field effect transistor driver circuit manufacturable in a MOS process is provided wherein a power field effect transistor (8) provides high current drive capability for driving fractional horsepower DC motors or other inductive loads (9). The power field effect transistor driver circuit provides reliable operation under environmentally harsh conditions such as overvoltage transients at the supply voltage terminals (1,2), loss of ground supply terminal (2) connection, and short circuits at the load terminal (3).

公开(公告)号：EP0336194A2

公开(公告)日：1989-10-11

申请号：EP89104970.2

申请日：1989-03-20

申请人： MOTOROLA, INC.

发明人： Dunn, William Charles ,  McEntarfer, Philip W.

IPC分类号： H02P7/285 ,  H02H9/04 ,  H03K17/08

CPC分类号： H02H9/046 ,  H03K17/0822

摘要： A power field effect transistor driver circuit manufacturable in a MOS process is provided wherein a power field effect transistor (8) provides high current drive capability for driving fractional horsepower DC motors or other inductive loads (9). The power field effect transistor driver circuit provides reliable operation under environmentally harsh conditions such as overvoltage transients at the supply voltage terminals (1,2), loss of ground supply terminal (2) connection, and short circuits at the load terminal (3).

摘要翻译： 提供了可在MOS工艺中制造的功率场效应晶体管驱动电路，其中功率场效应晶体管（8）提供用于驱动分数马力的直流电动机或其它感性负载（9）的高电流驱动能力。 功率场效应晶体管驱动电路在环境恶劣的条件下提供可靠的工作，例如电源端子（1,2）的过压瞬变，接地电源端子（2）连接的损耗和负载端子（3）的短路。