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公开(公告)号：EP1709691B1
公开(公告)日：2008-07-23
申请号：EP05700978.9
申请日：2005-01-17
CPC分类号： H01L31/101
摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).
摘要翻译： 本发明涉及一种特别用于半导体探测器的半导体结构。 所述半导体结构包括第一或第二掺杂类型的弱掺杂半导体衬底（HK），位于半导体衬底（HK）的第一表面上的第二掺杂类型的高掺杂漏极区域（D），高度掺杂 位于半导体衬底（HK）的第一表面上的第二掺杂类型的源极区（S），在源极区（S）和漏极区（D）之间延伸的导管（K），掺杂的内部栅极区 （IG），以及用于从内部栅极区域（IG）去除电荷载流子的吹出接触（CL），所述第一掺杂类型至少部分地位于管道（K）下方。 根据本发明，内部栅极区（IG）在半导体衬底（HK）中至少部分地延伸到吹出接触件（CL）并且吹出接触件（CL）相对于漏极端位于漏极端上 源区（S）。
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公开(公告)号：EP1709691A2
公开(公告)日：2006-10-11
申请号：EP05700978.9
申请日：2005-01-17
CPC分类号： H01L31/101
摘要： The invention relates to a semiconductor structure, especially for use in a semiconductor detector. Said semiconductor structure comprises a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).
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