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公开(公告)号：EP0864669A2
公开(公告)日：1998-09-16
申请号：EP98104301.1
申请日：1998-03-10
CPC分类号： C30B29/225 , C30B13/00 , C30B13/22 , C30B29/28 , C30B29/60
摘要： There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
摘要翻译： 提供单晶生长方法，其允许不相融的熔融化合物的单晶生长稳定，同时控制其生长方向。 单晶生长方法包括以下步骤：在加热炉内保持多晶和晶种; 将多晶与晶种接合; 在多晶与晶种接合的一侧相反的一侧加热多晶体以形成熔融区; 将熔融区移动到多晶与晶种接合的一侧，使得熔融区与晶种接触以允许接种; 并且通过移动与晶种接触的熔融区并种植到与多晶与晶种接合的一侧的相对侧，生长单晶。
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公开(公告)号：EP0864669B1
公开(公告)日：2001-11-21
申请号：EP98104301.1
申请日：1998-03-10
CPC分类号： C30B29/225 , C30B13/00 , C30B13/22 , C30B29/28 , C30B29/60
摘要： There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
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3.发明公开Cerium-containing magnetic garnet single crystal and producing method thereof 失效Einkristall aus Cerium enthaltenden magnetischen Granat und Verfahren zu ihrer Herstellung
公开(公告)号：EP0796931A1
公开(公告)日：1997-09-24
申请号：EP97104897.0
申请日：1997-03-21
摘要： The present invention provides a cerium-containing magnetic garnet single crystal having a size enough to use as a material for optical communication of an isolator and for an electronic device, and a producing method thereof.
The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of a melt and a solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.摘要翻译： 本发明提供一种具有足以用作隔离器和电子器件的光通信材料的尺寸的含铈磁石榴石单晶及其制造方法。 本发明的含铈磁石榴石单晶是通过熔融含铈磁性石榴石多晶体，同时对熔体和固体的固 - 液界面施加急剧的大温度梯度，然后使熔融的多晶体 。 优选通过使用光学加热装置，例如使用激光束的主加热装置和使用来自卤素灯的反射光的辅助加热装置的组合来加热多晶体。
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公开(公告)号：EP0796931B1
公开(公告)日：2001-09-19
申请号：EP97104897.0
申请日：1997-03-21
摘要： The present invention provides a cerium-containing magnetic garnet single crystal having a size enough to use as a material for optical communication of an isolator and for an electronic device, and a producing method thereof. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of a melt and a solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
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公开(公告)号：EP0864669A3
公开(公告)日：2000-05-17
申请号：EP98104301.1
申请日：1998-03-10
CPC分类号： C30B29/225 , C30B13/00 , C30B13/22 , C30B29/28 , C30B29/60
摘要： There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
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