摘要:
There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
摘要:
The present invention provides a cerium-containing magnetic garnet single crystal having a size enough to use as a material for optical communication of an isolator and for an electronic device, and a producing method thereof. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of a melt and a solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
摘要:
A material for magnetostatic wave elements consists essentially of a magnetic single-crystal garnet and at least one element of the halogen group incorporated therein, and has a composition expressed by the general formula:
Y³⁺₃(Fe²⁺ x Fe³⁺ 5-x )O 12-x X⁻¹ x , or
(Y³⁺ 3-m M m ) (Fe²⁺ x Fe³⁺ 5-x-n M' n )O 12-x X⁻¹ x
where M is at least one trivalent element, M' is at least one element of trivalent or divalent metals, X is at least one element of halogen group, 0
摘要翻译:用于静磁波元件的材料主要由磁性单晶石榴石和其中掺入的卤素基团的至少一个元素组成,并具有由以下通式表示的组成:Y 3+ 3(Fe 2) (Fe 3+)x Fe 3(x 3+)5-x)O 12-x X 1 x或(Y 3+ 其中M是至少一个三价元素,M'是三价或二价金属的至少一种元素,X是至少一种元素的三价或二价金属,X是至少一种元素, 卤素基团,0
摘要:
The present invention provides a cerium-containing magnetic garnet single crystal having a size enough to use as a material for optical communication of an isolator and for an electronic device, and a producing method thereof. The cerium-containing magnetic garnet single crystal of the present invention is obtained by melting a cerium-containing magnetic garnet polycrystal while applying a sharp, large temperature gradient to the solid-liquid interface of a melt and a solid, and then solidifying the melted polycrystal. The polycrystal is preferably heated by using an optical heating device, for example, a combination of a main heating device using a laser beam, and an auxiliary heating device using reflected light from a halogen lamp.
摘要:
There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
摘要:
There is provided a single crystal growth method which allows single crystal of an incongruent melting compound to be grown stable while controlling its growth orientation. The single crystal growth method comprises the steps of: holding polycrystal and seed crystal within a heating furnace; joining the polycrystal with the seed crystal; heating the polycrystal on the side opposite from the side where the polycrystal is joined with the seed crystal to form a melt zone; moving the melt zone to the side where the polycrystal is joined with the seed crystal so that the melt zone is in contact with the seed crystal to allow seeding; and growing single crystal by moving the melt zone which has been in contact with the seed crystal and been seeded to the opposite side from the side where the polycrystal is joined with the seed crystal.
摘要:
The present invention provides a magnetostatic wave device which comprises a single-crystal substrate having the formula Gd 3 Ga 5 O 12 ,and a single-crystal thin film having the formula Y 3-x M x Fe 5-y N y O 12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0 It has good characteristic properties (e.g., low insertion loss and ripple).