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    DEEP ULTRAVIOLET LED AND PRODUCTION METHOD THEREFOR
    4.
    发明公开
    DEEP ULTRAVIOLET LED AND PRODUCTION METHOD THEREFOR 审中-公开
    深紫外LED及其生产方法

    公开(公告)号：EP3249701A1

    公开(公告)日：2017-11-29

    申请号：EP16861100.2

    申请日：2016-11-01

    申请人： Marubun Corporation ,  Toshiba Kikai Kabushiki Kaisha ,  Riken ,  ULVAC, Inc. ,  Tokyo Ohka Kogyo Co., Ltd.

    发明人： KASHIMA Yukio ,  MATSUURA Eriko ,  KOKUBO Mitsunori ,  TASHIRO Takaharu ,  HIRAYAMA Hideki ,  KAMIMURA Ryuichiro ,  OSADA Yamato ,  MORITA Toshiro

    IPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/40

    摘要： The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength λ, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength λ, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate. Maximum light extraction efficiency is obtained when a distance from end faces of the voids in the direction of the substrate to the quantum well layer is greater than or equal to a total thickness of the barrier layer and the multi-quantum barrier layer (or the electron blocking layer) and less than or equal to 80 nm, and a depth h of each void is less than or equal to a total thickness of the p-AlGaN layer and the p-GaN contact layer. The reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components. A period a of the photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength λ. An order m in a formula of the Bragg condition satisfies 1≤m≤5. Provided that a radius of each void is R, R/a with which the photonic band gap becomes maximum is satisfied.

    摘要翻译： 深紫外LED的光提取效率增加。 深紫外LED具有设计波长λ，并且包括从与衬底相反的一侧依次布置的反射电极层，金属层，p-GaN接触层，对于光透明的p-AlGaN层 波长λ，多量子阻挡层或电子阻挡层之一，阻挡层和量子阱层。 p-AlGaN层的厚度小于或等于100nm。 具有多个空隙的反射光子晶体周期性结构设置在包括p-GaN接触层和p-AlGaN层之间的至少一个界面的厚度方向上的区域中，使得反射性光子晶体周期性结构不延伸超出 在衬底方向上的p-AlGaN层。 当从基板方向上的空隙的端面到量子阱层的距离大于或等于势垒层和多量子势垒层（或电子的总厚度）时，获得最大光提取效率 并且小于或等于80nm，并且每个空隙的深度h小于或等于p-AlGaN层和p-GaN接触层的总厚度。 反射光子晶体周期性结构具有为TE极化分量打开的光子带隙。 光子晶体周期性结构的周期a对于具有设计波长λ的光满足布拉格条件。 布拉格条件公式中的阶数m满足1≤m≤5。 假设每个空隙的半径为R，则满足光子带隙变为最大的R / a。