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公开(公告)号：EP0102192B2
公开(公告)日：1992-12-09
申请号：EP83304314.4
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
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公开(公告)号：EP0102192A2
公开(公告)日：1984-03-07
申请号：EP83304314.4
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
摘要： In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1 x 10" cm -2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission is obtained.
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公开(公告)号：EP0102734A3
公开(公告)日：1985-06-12
申请号：EP83304315
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0062
摘要： @ Pure-green light emitting diodes comprise an n-type GaP layer (2) formed on an n-type GaP substrate (1) and a p-type GaP layer (3) formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5 x 10 16 cm -3 . Liquid phase crystal growth of the above p-type GaP layer (3) is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.
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公开(公告)号：EP0102192A3
公开(公告)日：1985-06-12
申请号：EP83304314
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
摘要： In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1 x 10" cm -2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission is obtained.
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5.发明公开
公开(公告)号：EP0102734A2
公开(公告)日：1984-03-14
申请号：EP83304315.1
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0062
摘要： @ Pure-green light emitting diodes comprise an n-type GaP layer (2) formed on an n-type GaP substrate (1) and a p-type GaP layer (3) formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5 x 10 16 cm -3 . Liquid phase crystal growth of the above p-type GaP layer (3) is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities.
Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.-
公开(公告)号：EP0102734B1
公开(公告)日：1990-03-14
申请号：EP83304315.1
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0062
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公开(公告)号：EP0102192B1
公开(公告)日：1988-06-01
申请号：EP83304314.4
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
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