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公开(公告)号：EP0102192B2
公开(公告)日：1992-12-09
申请号：EP83304314.4
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
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2.发明公开Method of manufacturing green light emitting diode 失效Herstellungsverfahren einergrünesLicht emittierenden Diode。
公开(公告)号：EP0350058A2
公开(公告)日：1990-01-10
申请号：EP89112469.5
申请日：1989-07-07
发明人： Watanabe, Masayuki Intellectual Property Division , Nakajima, Masahiro Intellectual Property Division
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/16 , Y10S148/066 , Y10S438/973
摘要： In a method of manufacturing a green light emitting diode, an included angle (ϑ] defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region (7) formed on a cleavage surface (6) of a GaP single crystal wafer (1) and a (111) surface of the wafer (1) is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the (111) surface (8) of the GaP single crystal wafer (1).
摘要翻译： 在制造绿色发光二极管的方法中，由形成在GaP单元的解理面（6）上的氧化物区域（7）的沿着光和深条纹的纵向方向延伸的线限定的夹角（θ） 将晶片（1）的晶体晶片（1）和（111）表面设定为预定角度，并且在GaP单晶的（111）表面（8）上形成具有pn结的液相外延层 晶体晶片（1）。
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3.发明公开Semiconductor light-emitting device and method of manufacturing the same 失效Licht emittierende Halbleitervorrichtung und Verfahren zu deren Herstellung。
公开(公告)号：EP0260909A2
公开(公告)日：1988-03-23
申请号：EP87308096.4
申请日：1987-09-14
发明人： Kinoshita, Jun'ichi c/o Patent Division , Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Hirayama, Yuzo c/o Patent Division
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
摘要： An active layer is formed on an n-type InP buffer layer (11) of a substrate (10). A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion (12a) and side portions. A p-type InP cladding layer (15) is deposited on the entire surface of the active layer and grooves. The cladding layer (15) is selectively etched to form a mesa portion including the central active portion (12a) and expose the buffer layer (11). An insulating film (18) is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
摘要翻译： 在衬底（10）的n型InP缓冲层（11）上形成有源层。 一对带状槽形成有源层，以将其分成收缩部分（12a）和侧部分。 p型InP包覆层（15）沉积在有源层和沟槽的整个表面上。 选择性地蚀刻包覆层（15）以形成包括中心活性部分（12a）并暴露缓冲层（11）的台面部分。 绝缘膜（18）被涂覆在台面部分和缓冲层上，从而制造半导体发光器件。
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公开(公告)号：EP0260909B1
公开(公告)日：1992-11-19
申请号：EP87308096.4
申请日：1987-09-14
发明人： Kinoshita, Jun'ichi c/o Patent Division , Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Hirayama, Yuzo c/o Patent Division
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
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5.发明授权
公开(公告)号：EP0272636B1
公开(公告)日：1991-04-24
申请号：EP87118767.0
申请日：1987-12-17
CPC分类号： H01L31/0693 , H01L31/184 , Y02E10/544 , Y02P70/521 , Y10S148/066
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公开(公告)号：EP0102192A3
公开(公告)日：1985-06-12
申请号：EP83304314
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
摘要： In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1 x 10" cm -2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission is obtained.
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公开(公告)号：EP0350058A3
公开(公告)日：1990-05-30
申请号：EP89112469.5
申请日：1989-07-07
发明人： Watanabe, Masayuki Intellectual Property Division , Nakajima, Masahiro Intellectual Property Division
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/16 , Y10S148/066 , Y10S438/973
摘要： In a method of manufacturing a green light emitting diode, an included angle (ϑ] defined by a line extending along the longitudinal direction of light and dark stripes of an oxide region (7) formed on a cleavage surface (6) of a GaP single crystal wafer (1) and a (111) surface of the wafer (1) is set to be a predetermined angle, and a liquid phase epitaxial layer having a p-n junction is formed on the (111) surface (8) of the GaP single crystal wafer (1).
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8.发明公开
公开(公告)号：EP0272636A3
公开(公告)日：1988-10-26
申请号：EP87118767
申请日：1987-12-17
CPC分类号： H01L31/0693 , H01L31/184 , Y02E10/544 , Y02P70/521 , Y10S148/066
摘要： After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution (21) is terminated, a substrate (1) is temporarily dipped in an undoped GaAs saturated or supersaturated solution (22), and thereafter liquid-phase epitaxial growth is performed by a p-type Al x Ga 1-x As saturated solution (23). Thus, the n-type GaAs saturated solution (21) is prevented from being mixed into the p-type Al x Ga 1-x As saturated solution (23) to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.
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9.发明公开Method of manufacturing group III-V compound semiconductor solar battery 失效Herstellungsverfahren einer Sonnenzelle aus III-V-Halbleiterverbindungen。
公开(公告)号：EP0272636A2
公开(公告)日：1988-06-29
申请号：EP87118767.0
申请日：1987-12-17
CPC分类号： H01L31/0693 , H01L31/184 , Y02E10/544 , Y02P70/521 , Y10S148/066
摘要： After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution (21) is terminated, a substrate (1) is temporarily dipped in an undoped GaAs saturated or supersaturated solution (22), and thereafter liquid-phase epitaxial growth is performed by a p-type Al x Ga 1-x As saturated solution (23). Thus, the n-type GaAs saturated solution (21) is prevented from being mixed into the p-type Al x Ga 1-x As saturated solution (23) to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.
摘要翻译： 在通过n型GaAs饱和溶液（21）的液相外延生长步骤终止后，将衬底（1）暂时浸入未掺杂的GaAs饱和或过饱和溶液（22）中，然后液相外延生长为 由p型Al x Ga 1-x As饱和溶液（23）进行。 因此，防止了n型GaAs饱和溶液（21）混入p型Al x Ga 1-x As饱和溶液（23）中以使其污染，由此即使数量多 结晶次数增加。
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公开(公告)号：EP0102192B1
公开(公告)日：1988-06-01
申请号：EP83304314.4
申请日：1983-07-26
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L33/0008 , H01L33/0062 , Y10S148/066
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