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公开(公告)号：EP0950929A3
公开(公告)日：2000-08-23
申请号：EP99302790.3
申请日：1999-04-09
发明人： Ogawa, Katsutoshi , Kumon, Akira , Kitaoka, Yoshitaka , Aizawa, Masahiro , Matsuo, Hiroyuki , Fukano, Akira , Ryoji, Akira
IPC分类号： G03G15/34
CPC分类号： G03G15/346 , G03G2217/0025
摘要： In an image forming device wherein printing is accomplished such that passing of charged toners fed from a developer roller (2) through a plurality of openings (14) is controlled by control electrodes (16) of an aperture electrode (12) in accordance with image signals, toners held on the developer roller (2) are caused to reach the vicinity of the openings (14), by inputting a predetermined signal to the control electrodes (16) of the aperture electrode (12), at least once during the period when no image forming action in accordance with the prescribed image signals is performed.
摘要翻译： 在图像形成装置中，其中完成打印以使得从显影辊（2）供给的充电调色剂通过多个开口（14）的通过由孔径电极（12）的控制电极（16）根据图像 通过向孔电极（12）的控制电极（16）输入预定信号至少一次在显影辊（2）上保持保持在显影辊（2）上的信号，调色剂到达开口 当不执行根据规定的图像信号的图像形成动作时。
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公开(公告)号：EP0387010A3
公开(公告)日：1990-10-10
申请号：EP90302391.9
申请日：1990-03-06
发明人： Inada, Masanori , Ryoji, Akira
CPC分类号： H01L29/66318 , H01L21/28 , H01L29/7371
摘要： An object of the present invention is to suppress the surface recombination over the whole area of the external base of a hetero-junction bipolar transistor (HBT), to keep the current gain large, and to reduce the base contact resistance. The HBT of the invention has, as a surface protective film layer, a p-type semiconductor layer which has the higher portential of the energy conduction band than the base layer on an external base outside the junction between the mesa of the n-type emitter layer and the p-type base layer, and a base electrode thereon. Preferably, it has as a base contact layer a p-type semiconductor layer which shows reduced contact resistance with the base electrode on the surface protective layer comprising a p-type semiconductor layer. More preferabiy, it has a structure wherein a base electrode is formed on the base contact layer in contact with the projection part of the emitter electrode to the base contact layers A method of producing this HBT comprises at least the steps of forming an emitter mask on the portion to be an emitter on a multi-layer structure material having an n-type semiconductor layer for forming a collector, a p-type semiconductor layer or forming a base, and an n-type semiconductor layer for forming an emitter in this order from the substrate, and etching by using the emitter mask to form an emitter mesa and to expose a base layer; epitaxially forming as a surface protective film layer a p-type semiconductor layer which show the higher potential of the energy conduction band than the base layer on the external base outside the junction part between the emitter mesa and the base layer by using the emitter mask; and epitaxially forming a base electrode on the p-type surface protective film layer.
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公开(公告)号：EP0950929A2
公开(公告)日：1999-10-20
申请号：EP99302790.3
申请日：1999-04-09
发明人： Ogawa, Katsutoshi , Kumon, Akira , Kitaoka, Yoshitaka , Aizawa, Masahiro , Matsuo, Hiroyuki , Fukano, Akira , Ryoji, Akira
IPC分类号： G03G15/34
CPC分类号： G03G15/346 , G03G2217/0025
摘要： In an image forming device wherein printing is accomplished such that passing of charged toners fed from a developer roller (2) through a plurality of openings (14) is controlled by control electrodes (16) of an aperture electrode (12) in accordance with image signals, toners held on the developer roller (2) are caused to reach the vicinity of the openings (14), by inputting a predetermined signal to the control electrodes (16) of the aperture electrode (12), at least once during the period when no image forming action in accordance with the prescribed image signals is performed.
摘要翻译： 在其中进行印刷的图像形成装置中，使得从显影辊（2）馈送通过多个开口（14）的带电调色剂的通过由孔径电极（12）的控制电极（16）根据图像 通过将保持在显影辊（2）上的调色剂通过在该期间至少一次输入预定信号至孔电极（12）的控制电极（16）而到达开口（14）附近， 当不执行根据规定图像信号的图像形成动作时。
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公开(公告)号：EP0387010A2
公开(公告)日：1990-09-12
申请号：EP90302391.9
申请日：1990-03-06
发明人： Inada, Masanori , Ryoji, Akira
CPC分类号： H01L29/66318 , H01L21/28 , H01L29/7371
摘要： An object of the present invention is to suppress the surface recombination over the whole area of the external base of a hetero-junction bipolar transistor (HBT), to keep the current gain large, and to reduce the base contact resistance. The HBT of the invention has, as a surface protective film layer, a p-type semiconductor layer which has the higher portential of the energy conduction band than the base layer on an external base outside the junction between the mesa of the n-type emitter layer and the p-type base layer, and a base electrode thereon. Preferably, it has as a base contact layer a p-type semiconductor layer which shows reduced contact resistance with the base electrode on the surface protective layer comprising a p-type semiconductor layer. More preferabiy, it has a structure wherein a base electrode is formed on the base contact layer in contact with the projection part of the emitter electrode to the base contact layers A method of producing this HBT comprises at least the steps of forming an emitter mask on the portion to be an emitter on a multi-layer structure material having an n-type semiconductor layer for forming a collector, a p-type semiconductor layer or forming a base, and an n-type semiconductor layer for forming an emitter in this order from the substrate, and etching by using the emitter mask to form an emitter mesa and to expose a base layer; epitaxially forming as a surface protective film layer a p-type semiconductor layer which show the higher potential of the energy conduction band than the base layer on the external base outside the junction part between the emitter mesa and the base layer by using the emitter mask; and epitaxially forming a base electrode on the p-type surface protective film layer.
摘要翻译： 本发明的目的是抑制异质结双极晶体管（HBT）的外部基极的整个区域的表面复合，以保持电流增益较大，并降低基极接触电阻。 本发明的HBT具有作为表面保护膜层的p型半导体层，该p型半导体层在n型发射极的台面之间的结外部的外部基底上具有比基底层更高的能量导带的突出率 层和p型基层，以及基极。 优选地，其具有作为基极接触层的p型半导体层，其在包括p型半导体层的表面保护层上显示出与基底电极的接触电阻降低。 更优选地，其具有这样的结构，其中在与基极接触层的发射极的突出部分接触的基底接触层上形成基极。制造该HBT的方法至少包括以下步骤：在 在具有用于形成集电体的n型半导体层，p型半导体层或形成基极的多层结构材料上的发射极部分和用于以此顺序形成发射极的n型半导体层 并且通过使用发射极掩模进行蚀刻以形成发射极台面并露出基底层; 通过使用发射体掩模，在发射极台面和基底层外部的外部基底外表面上形成表现出保护膜层的p型半导体层，该p型半导体层表现出比基底层更高的能量导电电位; 并在p型表面保护膜层上外延形成基极。
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