公开(公告)号：EP0949731A3

公开(公告)日：2000-01-26

申请号：EP99106798.4

申请日：1999-04-06

申请人： Matsushita Electronics Corporation

发明人： Itoh, Kunio ,  Yuri, Masaaki ,  Hashimoto, Tadao ,  Ishida, Masahiro

IPC分类号： H01S3/19 ,  H01S3/025

CPC分类号： B82Y20/00 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34333

摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al 1-x-y-z Ga x In y B z N (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode (100).

摘要翻译： 本发明的氮化物半导体激光器件包括：氮化物半导体激光二极管（100）; 以及形成在所述氮化物半导体激光二极管的至少一个面上的保护层（20a，20b）。 保护层由Al1-xy-zGaxInyBzN（其中0

公开(公告)号：EP0949731A2

公开(公告)日：1999-10-13

申请号：EP99106798.4

申请日：1999-04-06

申请人： Matsushita Electronics Corporation

发明人： Itoh, Kunio ,  Yuri, Masaaki ,  Hashimoto, Tadao ,  Ishida, Masahiro

IPC分类号： H01S3/19 ,  H01S3/025

CPC分类号： B82Y20/00 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/10 ,  H01S5/34333

摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al 1-x-y-z Ga x In y B z N (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode (100).