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公开(公告)号：EP0986151A3
公开(公告)日：2000-04-12
申请号：EP99117438.4
申请日：1999-09-08
IPC分类号： H01S5/24
CPC分类号： H01S5/2231 , H01S5/32341 , Y10S438/956
摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a 〈1, 1, -2, 0〉 direction.
摘要翻译： 本发明的半导体发光器件包括：衬底; 发光层; 六方晶系第一III族氮化物晶体的半导体层; 以及第二III族氮化物晶体的包覆层。 沿着<1,1，-2,0>方向在半导体层中提供条纹沟槽。
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公开(公告)号：EP0986151A2
公开(公告)日：2000-03-15
申请号：EP99117438.4
申请日：1999-09-08
IPC分类号： H01S5/24
CPC分类号： H01S5/2231 , H01S5/32341 , Y10S438/956
摘要： A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a 〈1, 1, -2, 0〉 direction.
摘要翻译： 本发明的半导体发光器件包括：衬底; 发光层; 六方晶系第一III族氮化物晶体的半导体层; 以及第二III族氮化物晶体的包覆层。 沿着<1,1，-2,0>方向在半导体层中提供条纹沟槽。
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公开(公告)号：EP0949731A2
公开(公告)日：1999-10-13
申请号：EP99106798.4
申请日：1999-04-06
发明人： Itoh, Kunio , Yuri, Masaaki , Hashimoto, Tadao , Ishida, Masahiro
CPC分类号： B82Y20/00 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34333
摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al 1-x-y-z Ga x In y B z N (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode (100).
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公开(公告)号：EP0993048A3
公开(公告)日：2000-06-07
申请号：EP99117485.5
申请日：1999-09-10
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
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公开(公告)号：EP0951077A3
公开(公告)日：1999-12-15
申请号：EP99107202.6
申请日：1999-04-13
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/025 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al x Ga 1-x N (where 0≦x≦1) or ln y Al z Ga 1-y-z N (where 0
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6.发明公开Semiconductor device, semiconductor substrate, and manufacture method 审中-公开Halbleitervorrichtung，Halbleitersubstrat和Herstellungsverfahren
公开(公告)号：EP1091422A2
公开(公告)日：2001-04-11
申请号：EP00121878.3
申请日：2000-10-06
CPC分类号： C30B25/183 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02516 , H01L21/0254 , H01L33/025 , H01L33/20 , H01L33/32 , H01S5/0207 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32341
摘要： Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.
摘要翻译： 公开了一种半导体器件，其包括其中表面形成有凹陷的基板或从基板法线观察时具有闭合图形的突起和通过从至少内部的晶体生长形成在基板的表面上的半导体层 凹凸面或投影面的外表面。
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公开(公告)号：EP0949731A3
公开(公告)日：2000-01-26
申请号：EP99106798.4
申请日：1999-04-06
发明人： Itoh, Kunio , Yuri, Masaaki , Hashimoto, Tadao , Ishida, Masahiro
CPC分类号： B82Y20/00 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34333
摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al 1-x-y-z Ga x In y B z N (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode (100).
摘要翻译： 本发明的氮化物半导体激光器件包括：氮化物半导体激光二极管（100）; 以及形成在所述氮化物半导体激光二极管的至少一个面上的保护层（20a，20b）。 保护层由Al1-xy-zGaxInyBzN（其中0
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公开(公告)号：EP0951077A2
公开(公告)日：1999-10-20
申请号：EP99107202.6
申请日：1999-04-13
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/025 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L33/0075
摘要： A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al x Ga 1-x N (where 0≦x≦1) or ln y Al z Ga 1-y-z N (where 0
摘要翻译： 根据本发明的用于生长氮化物半导体的方法包括生长由通式AlxGa1-xN（其中0≤x≤1）或1nyAlzGa1-y-zN（其中0
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公开(公告)号：EP1045431A1
公开(公告)日：2000-10-18
申请号：EP00107908.6
申请日：2000-04-13
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/02661 , H01L21/02664 , H01L31/184 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.
摘要翻译： 本发明提供一种III族氮化物化合物半导体衬底的制造方法，包括：（a）在衬底上形成第一半导体膜，所述第一半导体膜由第一III族氮化物化合物半导体制成，并具有步骤; （b）形成由第一半导体膜上的第一III族氮化物半导体的热膨胀系数不同的第二III族氮化物化合物半导体制成的第二半导体膜; 和（c）冷却基板并将第二半导体膜与第一半导体膜分离。 因此，可以以高产率和高重现性制造大面积III族氮化物化合物半导体衬底。
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公开(公告)号：EP0993048A2
公开(公告)日：2000-04-12
申请号：EP99117485.5
申请日：1999-09-10
IPC分类号： H01L29/04
CPC分类号： H01L33/0075 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/2003 , H01L33/007 , H01L33/0079
摘要： A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
摘要翻译： 一种半导体器件，包括：晶体衬底，包括主表面和设置在所述主表面内的晶面，以便具有不同于所述主表面的表面取向的表面取向; 在晶体衬底上生长的半导体分层结构; 以及设置在晶面上的半导体层结构中的一部分处的有源区。
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