专利检索 ap:("Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.") AND inv:"MA, Tianping" 第 1 页

1.

发明公开
INCREASED EFFICIENCY OF CURRENT INDUCED MOTION OF CHIRAL DOMAIN WALLS BY INTERFACE ENGINEERING 审中-公开

公开(公告)号：EP4158631A1

公开(公告)日：2023-04-05

申请号：EP21729799.3

申请日：2021-05-25

申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

发明人： GUAN, Yicheng , MA, Tianping , BLAESING, Robin , PARKIN, Stuart, S.P.

IPC分类号： G11C11/16 , G11C19/08

2.

发明公开
INCREASED EFFICIENCY OF CURRENT INDUCED MOTION OF CHIRAL DOMAIN WALLS BY INTERFACE ENGINEERING 审中-公开

公开(公告)号：EP3916728A1

公开(公告)日：2021-12-01

申请号：EP20176531.0

申请日：2020-05-26

申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

发明人： GUAN, Yicheng , MA, Tianping , BLAESING, Robin , PARKIN, Stuart S.P.

IPC分类号： G11C11/16 , G11C19/08

摘要： The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device), comprising a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.