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公开(公告)号:EP4030987A1
公开(公告)日:2022-07-27
申请号:EP20742606.5
申请日:2020-06-29
申请人: Medtronic, Inc.
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公开(公告)号:EP3833428A1
公开(公告)日:2021-06-16
申请号:EP19758585.4
申请日:2019-08-09
申请人: Medtronic, Inc.
IPC分类号: A61N1/39 , A61B5/04 , A61B5/0402
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公开(公告)号:EP2823486A1
公开(公告)日:2015-01-14
申请号:EP13708636.9
申请日:2013-03-01
申请人: Medtronic Inc.
CPC分类号: G11C16/30 , G11C7/065 , G11C7/08 , G11C7/14 , G11C7/227 , G11C11/005 , G11C16/26 , G11C16/28 , G11C17/12 , G11C29/50 , G11C29/50004
摘要: Electrically erasable flash memory and method. The memory has a data storage element and a voltage sensing circuit. The data storage element is configured to store data bits, each of the data bits having a data state. The voltage sensing circuit is selectively coupled to individual ones of data bits and is configured to bias the data bits with at least one of a bias current and a bias resistance and to read the data state of the individual ones of the plurality of data bits.
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公开(公告)号:EP3833429A1
公开(公告)日:2021-06-16
申请号:EP19759189.4
申请日:2019-08-09
申请人: Medtronic, Inc.
IPC分类号: A61N1/39
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