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    POWER MOS TRANSISTOR WITH IMPROVED METAL CONTACT
    1.
    发明公开
    POWER MOS TRANSISTOR WITH IMPROVED METAL CONTACT 审中-公开
    具有改进的金属接触功率MOS晶体管

    公开(公告)号：EP2965355A1

    公开(公告)日：2016-01-13

    申请号：EP14709120.1

    申请日：2014-02-24

    申请人： Microchip Technology Incorporated

    发明人： DIX, Gregory ,  KLINE, Harold ,  GRIMM, Dan ,  MELCHER, Roger ,  WILLIAMS, Jacob, L.

    IPC分类号： H01L23/522 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L23/4824 ,  H01L23/5226 ,  H01L29/66477 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power MOS field effect transistor (FET) has a plurality of transistor cells, each cell having a source region and a drain region to be contacted through a surface of a silicon wafer die. A first dielectric layer is disposed on the surface of the silicon wafer die and a plurality of grooves are formed in the first dielectric layer above the source regions and drain regions, respectively and filled with a conductive material. A second dielectric layer is disposed on a surface of the first dielectric layer and has openings to expose contact areas to said grooves. A metal layer is disposed on a surface of the second dielectric layer and filling the openings, wherein the metal layer is patterned and etched to form separate metal wires connecting each drain region and each source region of the plurality of transistor cells, respectively through the grooves.

    POWER FIELD EFFECT TRANSISTOR
    3.
    发明公开
    POWER FIELD EFFECT TRANSISTOR 审中-公开
    功率FET

    公开(公告)号：EP2820679A1

    公开(公告)日：2015-01-07

    申请号：EP13708629.4

    申请日：2013-02-28

    申请人： Microchip Technology Incorporated

    发明人： DIX, Greg A. ,  GRIMM, Dan

    IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/08 ,  H01L29/45

    CPC分类号： H01L29/7809 ,  H01L29/0878 ,  H01L29/41766 ,  H01L29/456 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power field-effect transistor having a substrate (115) and an epitaxial layer (120) of a first conductivity type thereon, first and second base regions of the second conductivity type within the epitaxial layer, respective source regions (125) of a first conductivity type arranged within said base regions, and an insulated gate structure (130) covering at least partly, and arranged above an epitaxial layer portion between, said base regions. A drain contact (135) extends in a hole (137) or trench from a top of the epitaxial layer towards the substrate to couple a top contact (110) with said substrate. An implant region (145) may be provided below said hole or trench to link the substrate to the drain contact if the hole or trench does not extend to the substrate.